2SD882U Search Results

Contextual Info: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120

ic 4000

Abstract: 2SD882U-P 2SD882U
Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U

Contextual Info: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage