2SB130 Search Results

2sb1302

Contextual Info: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage

2SB1308

Abstract: 2SD1963 T100
Contextual Info: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)

MCC BFR

Contextual Info: MCC TM Micro Commercial Components Features • • • • • Case Material: Molded Plastic. Classification Rating 94V-0
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308 PNP Plastic-Encapsulate

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 ＳＯＴ－８９ １．ＢＡＳＥ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER

2SB1308

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A

2SB1300

Abstract: PH 06
Contextual Info: • 5 /— h Silicon T ran sis to r 2SB1300 is T J U M > ' =1V P N P ic f f i j a a s « * * * « *? j : c r + » * ; * < 4# v * >?m - ^ ii - f t V CE ( s a t ) ~ V 0.42 < , Ic(DO — TYP. ( @ I c /I B= — 3.0 L # ' & A S O ^ 'J A , I c(pulse)= — 5 . 0

Contextual Info: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SB1302

Abstract: ITR09567 ITR09568 ITR09570 4 a 20mA
Contextual Info: Ordering number:ENN2555A PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications Package Dimensions • DC-DC converters, motor drivers, relay drivers, lamp drivers. unit:mm 2038A [2SB1302] Features 4.5 1.6 1.5 0.4 1.0

2SB1308

Abstract: BJT BF 167
Contextual Info: SPICE PARAMETER 2SB1308 by ROHM TR Div. * 2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1308 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369

2SB1308

Contextual Info: h -7 > y 7. £ /Transistors 2 S B 1 3 2SB1308 I PNP '> « ;□ > b7>yz$ Epitaxial Planar PNP Silicon Transistor ftS à M M Iflî/L o w Freq. Power Amp. 8 • W fN ’jiEI/Dimensions Unit : mm 1) V cE fsa *)^ 1'« V cE (sa t)= -0 .4 5 V (Max.) *-» -S:

Contextual Info: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors

2SB1308Q

Abstract: 2sb1308r MCC BFR
Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

2sb1308p

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components Features x • • • • Case Material: Molded Plastic. Classification Rating 94V-0 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#

marking BJ pnp SOT89

Contextual Info: Ordering number : EN2555C 2SB1302 Bipolar Transisitor –20V, –5A, Low VCE sat PNP Single PCP http://onsemi.com Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers • Features • Low collector to emitter saturation voltage Adoption of FBET, MBIT processes

2sd1200

Abstract: 2SB1309
Contextual Info: h "7 > V X £ / T ransistors 2 S B 1 3 2SB1309 I t°^ ^ r'> 77^ 7 ° U - ^ P N P '> ';= !> h ÿ > y ' z $ fëJS}j£ tl;fri|lllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 9 • 1 Dimensions Unit : mm K T ? a t 3 Î i T * î ‘J , * s' ^ T ' Æ . - â o

Contextual Info: WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process better

MCC BFR

Contextual Info: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
Contextual Info: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: Product specification 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO

2SD1200

Abstract: transistor d 2333 2SB1309 ti25 2SD120 TO-126F TO-126-F
Contextual Info: 40E D ROHM CO LTD • 7020^=] aaOSb2D T HRHH h 7 > V ^ ^ /Transistors 2SB1309 : 2S@13< ““ “ X t ° $ * y 7 J l ' 7 ° l s - - J - B P N P T-33-/7 y V = J > ‘ :ü>Æ^^jiHlf!lffl/Lo w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • w* • ii-J fi^ jiH /'D im e n s io n s Unit : mm

2SB1301

Abstract: transistor a015 zt sot-89
Contextual Info: -y 2 . / - S ilic o n T ra n s is to r 2SB1301 P » N P x t 7 + - > 7 ^ r i ; m ymW'Mh'Jy^'- o 3 u 7 V _ K(süi>= — 0 . 4 2 V O Tg ,r;. n ¥: ? < , 3,0 o hv-K^V.'-ï ( , 4.5 ± 0.1 TYP. L -h A , 11•<pui- 5.0 zj -7 > i} / > 1.5 + 0.1 r- ? > A

2SB1306

Abstract: 2SB1307M
Contextual Info: h "7 > V ^ £ /Transistors 2SB1306/2SB1307M/2SB1326/2SB1386 2 S B 1 3 0 6 /2 S B 1 3 0 7 M 2 S B 1 3 2 6 /2 S B 1 3 8 6 P N P '> U = l> h 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • • ^ ii'T iilll/D im e n s io n s Unit: mm