2SK662 Search Results

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SK0662

Abstract: 2SK662
Contextual Info: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package • Code SMini3-G1 • Pin Name M Di ain sc te on na

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package ■ Features • High mutual conductance gm • Low noise type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te

2SK662

Abstract: GM marking 2SK66
Contextual Info: Silicon Junction FETs Small Signal 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

2SK0662

Abstract: 2SK662
Contextual Info: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High mutual conductance gm • Low noise type

Contextual Info: 2SK662 Silicon Junction FETs Small Signal 2SK662 Silicon N-Channel Junction Unit : mm For low-frequency amplification 2.1±0.1 0.425 • Features High mutual conductance gm ● Low noise type ● Downsizing of sets by S-mini type package and automatic insertion

2SK0662

Abstract: 2SK662 gm 64 general semiconductor
Contextual Info: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification (0.425) unit: mm 0.3+0.1 –0.0 ● High mutual conductance gm ● Low noise type ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

3sk fet

Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Contextual Info: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

3SK192

Abstract: 2SK651
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )

2sc4780

Abstract: A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W
Contextual Info: —5/ S Mini Type 3-pin Package Outline Transistors, Diodes Unit : mm 2 1 ± 0.1 1.25 ± 0.3 0.425 m uw l S = - S ( 3 S i ) / N - 7 ^ - - v l i . S t # W 5 - S ( 3 i f f i i ) ^ 0y ^ - v £ i u 5 - ^ ( 3 « ^ ) ¿ lP lli< 7 ) 1 4 f ! li H I # L fc . h 7 > v '7 , i? .

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)