XP1D874 Search Results

Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm 0.20±0.05 4 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SK1842

Abstract: XP0D874 XP1D874
Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SK1842

Abstract: XP0D874 XP1D874
Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET 0.425 Unit: mm For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 5˚ • Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: Composite Transistors XP0D874 XP1D874 N-channel junction FET Unit: mm (0.425) For low-frequency impedance conversion For infrared sensor 0.20±0.05 4 5˚ • Features 0.2±0.1 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02 • Two elements incorporated into one package

Infrared-Sensor

Abstract: Junction-FET 2SK1842 XP1D874
Contextual Info: Composite Transistors XP1D874 N-channel junction FET 2.1±0.1 0.65 2.0±0.1 2 1.25±0.1 0.425 5 3 4 0.9± 0.1 +0.05 • 2SK1842 x 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 1 : Source FET1 2 : Drain 3 : Source (FET2) Absolute Maximum Ratings (Ta=25˚C)

d20 diode

Abstract: 2SJ497
Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5-Pin Mini T y p e (D15) n n M ain C h a ra cteristics n_ n w r "~l U U U Application m V dsx (mA) (V) N -ch 2 elem en ts XN1871 - * 30 20 - 100 1.5 to 3.5 6-Pin S-Mini (D15) Type (D9)

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

2SK621

Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)

2SK621

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id