MA3068 Search Results

MA2560

Abstract: MA3056L MAS 560 KT 200 MA3120/M MA3047L MA2510 MA3056 MA3022 MA3024
Contextual Info: - 240y * m MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L MA3120 MA312 0 L

MA2560

Abstract: MA2510 MA3056 MA3062L MAS220 MA3020 MA3022 MA3024 MA3027 MA3036
Contextual Info: - 240- y * m S % P uff MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L

MA2560

Abstract: MA3062L MA2510 MA3022 MA3056 MAS220 MA3020 MA3024 MA3027 MA3036
Contextual Info: - 240y * m S % P uff MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L

MA1051

Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Contextual Info: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

5.9v zener

Abstract: MA3068 C100 MAZK068D
Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

MA8120-M

Abstract: MA8056M Zener MA3100M MA8091-M MA8330-M MA8051-M MA8082M MA8051L MA8068-H MA8100-M
Contextual Info: MA111 Zener Diodes MA8000 Series Silicon planer type Unit : mm For stabilization of power supply ● Satisfactory in rise performance in the low-current range ● Easy-to-select voltage rank which are further subdivided ● Reliability equivalent to the conventional products Mini type guar-

MA840

Abstract: MA3330 MA1000 Series MA1000
Contextual Info: Diodes I Variable Capacitance Diodes Application Type No. U HF/ VHF T u n in g Vr V CATV T u n in g UHF/ T u n in g UHF/ VHF AFC F M -A M AFC VC O ro (PF) (PF) (O ) Package No. 30 2 1 3 6 6 -1 6 6 6 25 2.10 -2 .5 6 < 0.5 Mira (2 puis) MA334 30 3 1 0 3 3 —1290

Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 +0.2 0 to 0.1 Symbol Rating Unit IF AV 100 *1

C100

Abstract: MA3068 MAZK068D
Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 +0.2 Symbol Rating Unit Average forward current

TPA2020

Abstract: ISS355 fairchild diode aa14 diode BUG C332 max1987 FBM-11-160808-301A20T D46 diode Maxim MAX1987 r5c551 fairchild aa11
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : MB02 2. PCI & IRQ & DMA Description : D 3. Block Diagram : Version : 0.4A C 4. Net name Description :

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA2560

Abstract: MA3330 MA1180 Panasonic MA1056 MA1033 ma4300 zener panasonic diode MA4020 MA8180 DIODE D29
Contextual Info: Diode # Zener Diodes Line-up Zener Voltage Vz V MA1000 Series DO-35 (D28) PD = SOOmW MA2000 Series DO-41 (D29) PD = 1W MA3000 Series Mini Type 3 pins (D12) P d = 500mW 1 .8 8 - 2.24 MA1020 MA4020 2 .0 8 - 2.45 MA 1022 MA4022 2 .2 8 - 2.70 MA1024 MA3024 MA4024

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: Panasonic GaAs MMICs GN8061 GaAs 1C Unit : mm For semiconductor laser drive • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. Ta = 25°C ■ Absolute Maximum Ratings Parameter Symbol Rating 6 V DD

5v laser diode

Contextual Info: GN8061 GaAs MMICs GN8061 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 M Di ain sc te on na tin nc ue e/ d ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features

Contextual Info: GN8062 GaAs MMICs GN8062 GaAs IC Unit : mm 8 High-speed switching 2 7 ● High output 3 6 Pulse current and DC bias current can be controlled. 4 5 M Di ain sc te on na tin nc ue e/ d ● 0.7min. 6.4±0.2 4.5max. 4.0max. 1.3typ. 1 ● 10max. 2.54±0.25 • Features

Contextual Info: Panasonic GaAs MMICs GN8062 GaAs 1C U nit : mm For semiconductor laser drive • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. ■ Absolute Maximum Ratings Ta = 25°C Param eter Symbol Power supply voltage

2SD874

Abstract: GN8061 MA3068 Panasonic LP
Contextual Info: Panasonic GaAs MMICs G N 8061 G aA s 1C For semiconductor laser drive U nit : m m • Features • High-speed switching • High output • Pulse current and DC bias current can be controlled. ■Absolute Maximum Ratings Ta = 25°C P aram eter S ym bol R ating