2SC4391 Search Results

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

Contextual Info: Panasonic Transistor 2SC4391 Silicon NPN epitaxial planer type For low -frequency output am plification Unit: mm C om ple m e ntary to 2 S A 1 674 • Features • Low collector to emitter saturation voltage V c E s a t • High collector to emitter voltage Vceo.

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).

2SC4391

Abstract: 2SA1674
Contextual Info: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).

2SA1674

Abstract: 2SC4391
Contextual Info: Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

d5050j

Abstract: 2SC4340 MP40 2SC4382 2SC4387 2SC4392 2SC4353 2SC4347 2SA1671 2SC4354
Contextual Info: - 198 - Ta=25‘ C , * E p f i T c = 2 5 £C m 2SC4339 % ?± an 2SC4339—Z 2SC4340 m £ am & VcBO V’cEO (V) (V) (W) (A) « Pc* ÎC (D C } VcB (V) (il (W) 9 1 100 1 9 1 100 1.3 8 1 60 1.3 10 1 80 5 1.5 25 0. 5 1 00 5 1.5 25 100 8 1.5 30 100 10 1.5 HS PSW/PD

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455