2SA1674 Search Results

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.

un604

Contextual Info: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name 2SA1674 UN601 DC-DC converter UN602 UN604

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm (φ0.8) 1.5±0.2 (1.05) 2SA1674+MA720 5 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

UN601

Abstract: 2SA1674 MA720 of IC 4151
Contextual Info: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm M Di ain sc te on na tin nc ue e/ d For DC–DC converter ● 2SA1674+MA720 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

d20 diode

Abstract: PA-120
Contextual Info: Transistors Selection Guide by Applications and Functions Composite Transistors # 6 Pin Mini Power Type (D20): Diode +Transistors, Transistors, Resistor Built-in Transistors DC-DC converter UN602 UN603 UN604 Camera UN801 Vceo (V) (A) typ. (V) 2SA1674 Diode

UN603

Contextual Info: Transistors Selection Guide by Applications and Functions • Composite Transistors • 6 Pin Mini Power Type (D17): Diode + Transistors + Resistor Built-in Transistors Application Functions Type No. Transistor Chip Name 2SA1674 UN601 (V) lc (A) - 80 - 1

UN601

Contextual Info: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm For DC–DC converter ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 2SA1674+MA720 0.6±0.1 ■ Absolute Maximum Ratings Transistor block

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.

2SA1674

Abstract: 2SC4391
Contextual Info: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SC4391

Abstract: 2SA1674
Contextual Info: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).

2SA1674

Abstract: 2SC4391
Contextual Info: Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO

UN603

Abstract: of IC 4151 Silicon PNP epitaxial 4cm2
Contextual Info: Composite Transistors UN603 Silicon PNP epitaxial planer transistor Unit: mm For DC–DC converter 2.5±0.2 ● 5 3 4 0.25±0.1 • Basic Part Number of Element 2 2SA1674 x 2 elements 0.6±0.1 1.8±0.1 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.

UN603

Abstract: UN602 2SA1674 UN601 MA720 UN604 "TRANSISTORS SELECTION GUIDE" MAX80A
Contextual Info: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name VcEO lc (V) (A) -80 -1 2SA1674 UN601 DC-DC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SA1674

Abstract: 2SC4391
Contextual Info: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo