B631K
Abstract: kb631k k b631k KTB631K b631ky k b631k y
Contextual Info: SEMICONDUCTOR B631K MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B631K Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name B631K B631K 3 hFE Grade Y O,Y,GR 4 Lot No. 816 98.06.23 Revision No :
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ktb631ko-126b631kkb631k+3k b631kb631kyk b631k y
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B631K
Contextual Info: B631K 广东省粤晶高科股份有限公司 —PNP silicon — •■主要用途：高压开关、功率放大等。 ■■绝对最大额定值（Ta＝25℃） 项 目 符 号 额定值 单 位 集电极—基极电压 VCBO -120 V 集电极—发射极电压
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b631k-50ma-500ma-50vie+301maie01maic-500maib
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c3807
Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4
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k2270a1765a1497/c3860a1503/c3864+16a1509/c3899a1511/c3901a1572/a1574/c4070a1582/c4113a1590/c4121c3807c3898k443d16810k545k1311b1127c4146k2073b986
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transistor D600k
Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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enn346g2sb631631k/2sd60000v/120v+12100/120v2009bo-126transistor d600ktransistor d600d600kd600k transistortransistor b631b631kb631 transistortransistor b631kk b631k
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2SB631K
Abstract: D 600K
Contextual Info: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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enn346g2sb631631k/2sd600+700v/120v100/120v2009b631k/2sd600o-1262sb631kd 600k
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transistor D600k
Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Contextual Info: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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2sb631631k/2sd60000v/120v100/120v+112009bo-126transistor d600ktransistor d600transistor b631d600k transistortransistor b631kd600kb631 transistorb631kd600
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2sb631 transistor
Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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enn346g2sb631631k/2sd60000v/120v+7100/120v2009bo-1262sb631 transistortransistor b631transistor d600k2sd600
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D600K
Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
Contextual Info: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.
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en346g2sb631631k/2sd60000v/120v+12100/120v2sb631kd600k2sd60b631kb631k b631kd600k to 126to-126 d600d6002sb62sd600
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D600K
Abstract: 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600
Contextual Info: 注文コード No. N 3 4 6 G 2SB631, 631K / 2SD600, 600K N346G 41400 半導体ニューズ No.346E（’ 91 大信号トランジスタ D.B.Vol.1 No.346F）とさしかえてください。 2SB631, 631K 2SD600, 600K 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ
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2sb6312sd600n346g2sb631k+6d600kb631k631kd600k to 126to-126 d600d600
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D600K
Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
Contextual Info: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.
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en34sg2sb631631k/2sd60000v/120v+7100/120v2sb631kd600kb631kpnp 2sd631kd600k to 126
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c4460
Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4
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1503/c1565/c1574/c1590/c+161616/c1654/cc38201782/cb1235/dc3151c4460d1651d1047k d1047b817c2621d1650b1269c4106d895
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c2314
Abstract: c3807 C3502 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127
Contextual Info: S4PfVO X O — 1 2£> O :T0-126ML, *:T0-126LP, Unmarked :T0-126. \ \ Type T r a n s i s t o r s ♦¡D arlington V CEO I \ V C \ (mA) \ 18 2 0 2 5 3 5 4 5 5 0 7 0 6 0 8 0 10 0 12 0 16 0 A1404 A15380 C3598 <39530 200 A1723 C4271 C4660O A1402 C3596 A15360
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t0-126mlt0-126lpt0-126a1352+15a1380a1406a14780a1540oc3416c3502c2314c3807a1249c3953c3117transistor c3807c3116d826b1127
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