2SD60 Search Results

2SB631

Abstract: 2SB631K
Contextual Info: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity

2SD600K

Abstract: 2sd600* transistor Spice Parameter, Bipolar Transistor
Contextual Info: 2SD600K SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 210.0f NF 1 IKF 500.0m NE 2 NR 1 IKR 240.0m NC 2 IRB 20.00m RE 125.0m XTB XTI 3 VJE 680.0m TF 1.5n VTF 100 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and

transistor MAR 543

Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR NPN SOT–23 FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

MMBT2907ALT1

Contextual Info: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Contextual Info: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1

2SD0601A

Abstract: 2SD1328 2SD601A XN04505 XN4505
Contextual Info: Composite Transistors XN04505 XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Tr1 Tr2 0.95 3 +0.1 +0.1 0.1 to 0.3 2SD0601A(2SD601A) + 2SD1328 0.4±0.2 1 : Collector (Tr1)

5H MARKING

Abstract: XP4501 2SD601A
Contextual Info: Composite Transistors XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD601A x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

sot 23 transistor

Contextual Info: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage

transistor D600k

Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

2SB709A

Abstract: 2SD601A XP1B301
Contextual Info: Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings

2SD0601A

Abstract: 2SD601A XP04501 XP4501
Contextual Info: Composite Transistors XP04501 XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SD0601A

Abstract: 2SD601A XP06501 XP6501
Contextual Info: Composite Transistors XP06501 XP6501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SB710A

Contextual Info: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
Contextual Info: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)

Contextual Info: Transistors IC SMD Type Product specification 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .

2SD602

Abstract: Silicon NPN Epitaxial Planar Type
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .