2SK1228 Search Results

2SK1228-(TX)

Contextual Info: 2SK1228 Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 ● 2.5V drive possible 1.45 Gate-protection diode built-in 1 3 +0.1 ● 0.65±0.15 Gate-Source voltage VGSO 10 V Drain current ID ±50 mA Max drain current

2SK1228

Contextual Info: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode

2SK1228

Contextual Info: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching Unit: mm (0.65) 2 1 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings (Ta = 25°C) Unit Drain to Source voltage VDS 50 V Gate to Source voltage VGSO 10 V Drain current ID 50

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Drain-source voltage

2SK1228

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Unit Drain-source voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05

2SK1228

Contextual Info: Silicon MOSFETs Small Signal 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 Unit Drain-source voltage VDS 50 V Gate-source voltage (Drain open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05

2sk122

Abstract: 2SK1228
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Peak drain current Power dissipation Channel temperature

2SK1228

Contextual Info: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1227

Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060
Contextual Info: ft f m % ít ffl € m m & X % * fr K * V ft (V) 2SK1203 a i SW-Reg, D D C MOS N E 9 00 D S S ±20 2SK1204 H i SW-Reg, D D C MO S N E 900 D SS ±20 a» X P d/Pc h I* ft* (A) (max) (A) Vd s (V) (min) (V) (max) V d s (V) (V) (13=25^) tí g m (min) (typ)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SK2276

Abstract: 2sk227
Contextual Info: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

QN7002

Abstract: SC59 MARKING JM nec sc-59 fet 2sa812a-t1b-at 2SC1623A transistor mos fet 2n7002 nec amplifiers 2SA812-T1B-A RK7002A
Contextual Info: Small Signal Transistor / MOS FET High Production Efficiency Super Matrix Line Products NEC Electronics reintroduces commonly used products with resonable price. Features • Manufactured in uniform bulk batches on super-efficient production lines matrix: multi-row simultaneous forming lead