2SK2211 Search Results

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching Unit: mm 4.5±0.1 • Features 1.6±0.2 1.5±0.1 1.5±0.1 3° 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 2.5±0.1 4.0+0.25 –0.20 ● Low ON-resistance RDS(on) ● High-speed switching

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching unit: mm • Features 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter * Symbol 2.5±0.1 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance

2SK2211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain

Contextual Info: 2SK2211 Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS Unit : mm For switching 1.5±0.1 ● Downsizing of sets by mini-type package and automatic insertion by 45˚ 0.4±0.08 0.5±0.08 1.5±0.1 magazine packing are available. +0.25 High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211G Silicon N-channel MOSFET For switching circuits • Features ■ Package • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: 2SK2211 sot89 Marking mosfet marking 2M
Contextual Info: MOSFET SMD Type Silicon N-Channel MOSFET 2SK2211 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON-resistance RDS ON 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 High-speed switching +0.1 4.00-0.1

2SK2211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 3˚ ue pl d in an c se ed lud

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 4.0+0.25 –0.20 3˚ 3 2 0.5±0.08 1 0.4±0.08 0.4±0.04

2SK2211

Contextual Info: Silicon MOSFETs Small Signal 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic

Contextual Info: IC SMD Type Type SMD Product specification 2SK2211 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON-resistance RDS ON 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 High-speed switching +0.1 4.00-0.1

2SK2211G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK2276

Abstract: 2sk227
Contextual Info: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)