2SK0615 Search Results

vth for mos 0,9

Abstract: 2SK0615 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features 2.5±0.1 6.9±0.1 Drain to Source voltage 80 V 20 V ±0.5 A ID Max drain current Allowable power dissipation Channel temperature Storage temperature

2SK61

Abstract: 2SK0615 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

2SK0615

Abstract: 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm • Features 6.9±0.1 * 1.0 0.85 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP

2SK0615

Abstract: 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)