2SK601 Search Results

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04

Contextual Info: 2SK601 Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS Unit : mm For switching ● High-speed switching ● Direct drive possible with CMOS, TTL ● Downsizing of sets by mini-power type package and automatic inser- 45˚ +0.1 1.0–0.2 0.4±0.08

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOS FETs Small Signal 2SK0601 (2SK601) Silicon N-Channel MOS FET For switching unit: mm • Features Ratings Unit 80 V +0.25 0.4max. 0.4±0.08 +0.1 1.0–0.2 Symbol 45˚ 4.0–0.20 2.6±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 1.5±0.1

2SK0601

Abstract: 2SK601 MS2002
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SK60

Abstract: 2SK601
Contextual Info: Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS FET For switching unit: mm 1.5±0.1 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings (Ta = 25°C) +0.25 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on) ● High-speed switching

2SK601

Abstract: 2SK0601 2SK60
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 2.5±0.1 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 0.4 max. 2.6±0.1 Rating Unit Drain to source voltage VDS 80 V Gate to source voltage VGSO 20 V Drain current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.5±0.1 VDS Gate-source voltage (Drain open) VGSO Drain current ID Peak drain current

2SK582

Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

2SD1483

Abstract: 2sb1208 2SK690 2SB807 2SD96
Contextual Info: — 'y Mini Power Type 3-pin Package Outline Transistors 1 .5±0.1 U n i t ! mm >h 5 -/N "7 -iï(3 s s i)M ' y / r - v « , * « n ic i« « a, tin it t * « «t ^ ciêit ÿ n fc/jvaaw •y ^ / ' “ y *t - • ft v 'T \ S 7 > v X 2 4 '£ '( : : $ f8 £ ftT i'3 : T o

2SK2276

Abstract: 2sk227
Contextual Info: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)