2SD96 Search Results

2SD965

Contextual Info: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera

2SD965AL-AB3-R

Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89

Contextual Info: Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965K Features Low collector-emitter saturation voltage VCE sat Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating

smd 2sd965

Abstract: npn smd 2a 2SD965
Contextual Info: Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965 Features Low collector-emitter saturation voltage VCE sat Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter

2SD965

Abstract: 2sd965 transistor
Contextual Info: WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage

IC tl 072

Abstract: 2SD0965 2SD965
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SB869

Abstract: 2SD961
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB869 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·Complement to Type 2SD961

2SD965

Abstract: 2sd965 transistor
Contextual Info: 1. 2SD965 2.

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SB869

Abstract: 2SD961
Contextual Info: 2SD961 2SD961 v ij 13 > N PN W 'tJZ .'i J : \ d l $ : * r ' > T J\s 7 “i s — j - j f c / S i NPN Epitaxial Planar / P o w e r Switching 2SB869 t □ V / ' J y Unit ! mm U /C o m p le m e n ta ry P a ir w ith 2SB869 10.5 + 0.5 • if ^ ¡¡/F e a tu re s

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C

2SD965

Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252

2SB0790

Abstract: 2SB790 2SD969
Contextual Info: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

2SB789A

Abstract: 2SB789 2SD968 2SD968A marking symbol ER transistor IC 4020
Contextual Info: Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100

Contextual Info: UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER

2SD965

Abstract: 2SD965A 2sd965 transistor
Contextual Info: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera

2SD965U

Abstract: 2SD96
Contextual Info: ST 2SD965U NPN Silicon Epitaxial Planar Transistor For low frequency power amplification The transistor is subdivided into two groups, Q and R, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage

sot 89 2sd965

Abstract: 2SD965
Contextual Info: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera

2sd965 transistor

Abstract: 2SD965
Contextual Info: DC COMPONENTS CO., LTD. 2SD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC