BJTS Search Results

L6521

Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■

S042P

Abstract: NPN pnp MATCHED PAIRS BJT characteristics r14 diode pnp transistor datasheet NPN MATCHED PAIRS LM1496 OPAMP pdf of transistors npn pnp pnp and npn
Contextual Info: Four-quadrant multiplier R.M.M. Derkx Modern four-quadrant multipliers frequently consist of two matched di erential pairs of npn BJTs. This principle was developed in 1968 by B.Gilbert and is applied in the mixers multipliers S042P of Siemens and the LM1496 of National Semiconductor. A four-quadrant multiplier with

IGBT PIN CONFIGURATION

Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x
Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and

SiC BJT

Abstract: transistor 304
Contextual Info: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.

2SD2195

Abstract: is2764 BF 246 Darlington npn BF800
Contextual Info: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

2SB1316

Abstract: Darlington pnp spice
Contextual Info: SPICE PARAMETER 2SB1316 * 2SB1316 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1316 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

2SD1867

Abstract: BF800
Contextual Info: SPICE PARAMETER 2SD1867 * 2SD1867 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1867 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

HBFP-0450

Abstract: Agilent MSA-2543 JESD22-A113-B MSA-2543 MSA-2X43 qcpm HBFP-0405 HBFP-0420 HBFP0450 MSA-2743
Contextual Info: Agilent MSA-2543 / 2643 / 2743 MMIC Amplifier Reliability Data Sheet Description The Agilent MSA-2x43 is a MMIC amplifier fabricated using the NT25 process. This process has been qualified on-wafer level and in products such as the Agilent HBFP-0405, HBFP-0420, HBFP0450 BJTs and the QCPM-9804

l6520

Abstract: L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver
Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation

IXAN0061

Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
Contextual Info: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and

Drive Base BJT

Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
Contextual Info: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

Half BRIDGE driver for bjt

Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■

current fed push pull topology

Abstract: EFD25 n87 N87 material
Contextual Info: MIC3830/3831/3832/3833 Current-Fed PWM Controllers Preliminary Information The three output stages are totem-pole drivers capable of 1A peak current to external power MOSFETs, BJTs, or IGBTs. General Description The MIC3830, MIC3831, MIC3832, and MIC3833 are a

2n7002ltig

Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
Contextual Info: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or

Transistor D 799

Abstract: 2SD5060 D 799 2SC5060
Contextual Info: SPICE PARAMETER 2SD5060 * 2SC5060 DARLINGTON NPN BJT model * Date: 2006/12/08 * BJTs with diodes and resistors *C B E .SUBCKT 2SC5060 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.702 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.000E3 R2 4 3 1.000E3 .MODEL Dmodel D

Bjt 547

Abstract: 4067 spice model Transistor 547 bjts C 547 C 2SD2143 Darlington npn
Contextual Info: SPICE PARAMETER 2SD2143 * 2SD2143 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2143 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D

2SD1980

Abstract: 3238 bjts BF800
Contextual Info: SPICE PARAMETER 2SD1980 * 2SD1980 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1980 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

4067 spice model

Abstract: 2SD1866
Contextual Info: SPICE PARAMETER 2SD1866 * 2SD1866 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD1866 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D

Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package

BLY93a

Contextual Info: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR

3818

Abstract: 322 652 BF-700 2SB1580 Darlington pnp spice tr3502
Contextual Info: SPICE PARAMETER 2SB1580 * 2SB1580 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1580 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

Bjt 547

Abstract: Transistor 547 npn darlington 2SD2212 BF650
Contextual Info: SPICE PARAMETER 2SD2212 * 2SD2212 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2212 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D