2SC5060 Search Results

2SC5060

Abstract: 2SC5060 equivalent ic 9010
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 !External dimensions (Units : mm) 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

2SC5060

Contextual Info: 2SC5060 /Transistors 2SC50601 7Jl'7‘L/ ~ f^N P N n'syztw-'J> ^ > # # Epitaxial Planar NPN Silicon Transistor Darlington) J i)j£ li:ftiti,l1!ffl/L o w Freq. Power Amp. • • 1) v f iiE l/D im e n s io n s (U n it : m m ) 90±10V » 7 K £ f*3SE„

2sd2396

Abstract: 2SC5060 d416
Contextual Info: Transistors 2SD2396 2SC5060 96-819-D351 (96-733-D416) 323

2SC5060

Abstract: 2SC5060 equivalent
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

transistor D351

Abstract: D416 transistor
Contextual Info: 2SD2396 2SC5060 Transistors I Low Frequency Transistor 60V, 3A 2SD2396 •F e a tu re s •A b so lu te maximum ratings (T a= *25t ) 1 ) L o w V cstwt>. CTyp. 0 .3 V a t Ic/ I b “ = 2 /0.0 5A ) 2) H ig h D C c u rre n t g a in . (T y p . 1 0 0 0 a t V ce/I c = = 4 V /0 .5 A )

2SC5060

Abstract: 2SC5060 equivalent transistor 2sc5060 2sg50
Contextual Info: 2SC5060 Transistor, NPN, Darlington Features Dimensions Units : mm • • • • • • available in ATV TV 2 package built-in 90 ±10 V Zener diode between collector and base low Zener voltage fluctuation highly resistant to surge damper diode incorporated

Transistor D 799

Abstract: 2SD5060 D 799 2SC5060
Contextual Info: SPICE PARAMETER 2SD5060 * 2SC5060 DARLINGTON NPN BJT model * Date: 2006/12/08 * BJTs with diodes and resistors *C B E .SUBCKT 2SC5060 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.702 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.000E3 R2 4 3 1.000E3 .MODEL Dmodel D

Contextual Info: 2SD2396 2SC5060 Transistors Low Frequency Transistor 60V, 3A 2SD2396 •F e a tu re s 1) 2) 3) 4 ) •A b s o lu te maximum ratings (T a = 2 5 tî) Low VcE(sai). (Typ. 0.3V at Ic/I b = 2 /0 .0 5 A ) High DC current gain. (Typ. 1000 at V ce/I c= 4 V /0 .5 A )

2SC5060

Abstract: 9010V
Contextual Info: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.

Contextual Info: 2SC5060M Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2SC5060 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.5.0k

Contextual Info: 2SC5060N Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great

2SB1242

Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Contextual Info: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

2SB1482

Abstract: 2SD2004 low noise transistors rf 2SD2422 2sc4040 2sd2006 2SC4137 2SB1443 2sd2010
Contextual Info: Bipolar transistors-2SA series Overall product summary Product summary—Sheet 1 of 4 Package Application V CEO * V CES FTL ATV TO-92 MRT SPT V Part no. Part no. (The ( symbol indicates a matched pair) 50 /2SA933AS '2SC1740S 120 2SC2389S Low noise Preamplifier

2SB1242

Abstract: 2SD 92 M 2SC401 2sd darlington 2SB1485
Contextual Info: T ra n s is to rs ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package Application ATR ATV Part No. Driver Storobo Flash Low VcE sat Low VcE(sat) - 2SC2021M LN

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773