2SK69 Search Results

Contextual Info: 2SK690 High Frequency FETs 2SK690 GaAs N-Channel MES Unit : mm For UHF medium-output power amplification 1.5±0.1 Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 45˚ +0.1 1.0–0.2 0.4±0.08 +0.25 ● 0.1

diode sy 200

Contextual Info: »E|t,4E?SaS □□IflflTS 2 | E C ELECTRONICS INC 7 ^ 3 or N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 SK 699 is N-Channel M OS Field Effect Power Tran ­ P A C K A G E D IM EN SIO N S sistor designed for solenoid, motor and lamp driver.

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Z623

Abstract: IRF 5350 2SK698 IRF 544 IRF 544 km Z62-3 irf 846 45661 kivs tt 22
Contextual Info: NEC m + T t v M O S Field E ffe c t P o w e r T ra n s is to r r x 2SK698 MOS F E T j i m 2S K 698Ü , N •f'-v ffiirC;0?iS; < , X 'i / > F ^ < x7 ~ I T i î ' , "/i~ > m Unit : mm) MOS F E T f ^ > X -f 'y -f- > 3.2 + 0.2 D C - D C n v ^ '- i 't t l f t o

2SK690

Abstract: 2SK69
Contextual Info: High Frequency FETs 2SK690 GaAs N-Channel MES FET For UHF medium output power amplification M Di ain sc te on na tin nc ue e/ d unit: mm • Features 0.4±0.08 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter * Symbol Unit 10 V VDS Gate to Source voltage

2SK699

Contextual Info: »E|t,4E?SaS E C ELECTRONICS INC GGlflflTa 2 | 7 ^ 3 ?.- o r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 S K 6 9 9 is N-Channel M O S Field Effect Power Tran­ P A C K A G E D IM E N S IO N S sistor designed for solenoid, m otor and lamp driver.

K695

Abstract: 2SK695
Contextual Info: blE D 2SK695 • 4inbEQ5 0013133 3S3 « H i m HITACHI/ OPTOELECTRONICS SILICON N -CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching 1. Gate 2. Drain (Flange) 3. Source (Dimensions i • Low Drive Current

G100M

Abstract: JSs diode
Contextual Info: 2SK69S SILICON N -CH ANNEL MOS» F E T f c j f • tt • * f i -y + > r & > • x- i 'o rjS JB t^ ji^ o •m w iw titf'i'Z •2 DC—DC ^ 3: iftcJftiS. D im ensions in mm (TO-3P) P O W ER VS. T E M P E R A TU R E DERATING ■ A B S O LU TE MAXIMUM R/M IN G S ( T a = 25°C)

2SK847

Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247

2SK694

Contextual Info: 2SK694 FIELD E F F E C T T R A N S IS T O R SILICO N N CH A N N EL M O S T Y P E TT-MOSll HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • L o w Dra i n - S o u r c e ON Resistance

2SK696

Abstract: DL100A Hitachi Scans-001
Contextual Info: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current

2SK696

Contextual Info: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current

2SK693

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE w-MOSn 2SK693 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC; CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Sour ce ON Resistance : Rd s (q n )=0. 32f2 (Typ.)

Contextual Info: blE D 2SK696 ~ 4 4 ^ 5 0 5 GD13137 TTT • H I T 4 HITACHI/ 0PT0ELECTR0NICS SILICON N -CH A N N EL MOS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1- G a te 2. D ra in (F la n g e ) • • • • Low On-Resistance High Speed Switching Low Drive Current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

2SJ235

Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

2sk1299

Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

ac Inverter schematics 10 kw

Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK44

Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be