2SK79 Search Results

eRVDS

Abstract: 2SK797 OS1012
Contextual Info: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.

2SK793

Abstract: 2SK79
Contextual Info: 7T-M0 S 2SK793 : o 0 3.2±0.2 15.9MAX • SBEE-e-To / V ( B r ) d s s = 850V : á 3 • JK Ä f ä ß iiT K i 9 y : • S Í l S í f E ; 0 * 0 ' 'o : lQ s s = ± 1 0 0 n A ( # ; * : ) ( V q s = ± 2 0 V ) I DSS = 300/íA ( * * • •> l Y f s l =1.7S ( « $ ) ( I D= 3 A )

2SK799

Abstract: 2sk79 NEC 701
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK799 The 2SK799 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches Suitable fo r switching power supplies, actuater controls,

MFC 6030

Abstract: JE 33 2SK799 T150 transistor bf 271 m0878 965 transistor tt 22
Contextual Info: ~ r— S 7 V • — h SEC m Y = 7 > & * 9 S Field E ffe c t P o w e r T r a n s is to r = F = r iŸ t X N ^ ^ ;u ^ < 7 -M 0 S FE T I t f f l — MOS F E T X " f > 2SK799Ü, # W Ì & ° V d s s = 450 V, Id dg =12 A o f â f > Σ ÎÆ R DS(o n )< 0 .5 Q 0.65 + 0.1

2SK795

Contextual Info: Power F-MOS FET 2SK795 2SK795 Silicon N-channel Power F-M OS F E T • Package Dimensions ■ Features • Low ON resistance R ds on : R ds (on) = 3 .5 il (typ.) • High switching rate : t( = 30ns (typ.) • No secondary breakdown • High breakdown voltage

2SK797

Contextual Info: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES

VW-20V

Abstract: 2SK79 2SK796A VC-50 2SK796
Contextual Info: P ow er F-MOS FET 2SK796, 2SK796A 2S K 796, 2S K 796A Silicon N -ch an n el P ow er F -M O S F E T Package Dimensions • Features • Low O N r e s is ta n c e R ik o n : R c.- (on ) = 3 . 0 f i (ty p .) U n it: m m • High sw itch ing r a te : t« = 4 0 n s (ty p .)

DIODE LT 6202

Abstract: 2SK797 m2sk797 TC-6202 S72 MOS T1IU upcll APC1150
Contextual Info: M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SK797 N f - ^ ^ '^ '7 - M O S x - " j + r i i f F E T x f m f l MOS FET V, 5 V m i l * IC 2SK797Ü, N f 7 f > / f v < -1 x t - t I f î : mm 15.7 MAX. y iz / ^ f # K , y 4.7 MAX 1.5 . 3.2 ± 0.2 > 7 °<7) S i l f P ( c | I M T - t „

2SK794

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK794 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. 15.9MAX 0 3.2±0.2 . High Breakdown Voltage : V(BR)DSS=900V

2sk790

Abstract: 2SK79
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII 2SK790 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance : • High Forward Transfer Admittance:

2SK797

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SK797 The 2SK797 is N-Channel MOS Field Effect Power Transistor designed fo r solenoid, m otor and lamp driver. PACKAGE DIMENSIONS in m illim e te rs inches • Gate Drive — Logic level —

2SK799

Abstract: 100C
Contextual Info: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches

2sk792

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK792 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. . High Breakdown Voltage : V(gR)q s s =900V Unit in mm 1 0.3MAX. , 0 3 .6 ¿0.2 . High Forward Transfer Admittance : ]Yfs | =1.0S(Typ.)

Contextual Info: Power F-MOS FET 2SK796, 2SK796A 2SK796, 2SK796A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) = 3 . OH (ty p .) Unit: mm • High sw itch in g r a te : t f = 4 0 n s (ty p .) k 15._5max.

2sk792

Contextual Info: c^r-MOS 2SK792 ï f l Iü ffl v*y?m o s i K i s ^ 'f O X-< "J -ÏT — ÿ h '7 - f y 'ffl W- U—9 : mm 10.3MAX . 0 3.6±0.2 ÄStET-f, : v BR)DSS = 900 v JRÆrnlgST h* * : ! Yf s ! = 1.0 s ( H i p ) ( I d = 1.5 A ) : lGSS = ± 1 0 0 n A ( Vqs = ± 2 0 V)

2SK793

Abstract: 2SK79
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK793 INDUSTRIAL APPLICATIONS Unit in ram HIGH SPEED, HISH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. . High Breakdown Voltage 15.9MAX. 03.2±O.2 : V(BR)DSS=850V

2SK796

Abstract: 2SK796A 2SK79 V4160
Contextual Info: P o w er F-MOS FET 2SK796, 2 S K 79 6 A 2SK 796, 2SK796A Silicon N-channel Power F-MOS FET P a c k a g e D im e n s io n s • F e a tu re s • L ow ON r e s is ta n c e R d s on : R Ds (on) = 3 . 0 1 } (ty p .) Unit: mm • High sw itching ra te : tf = 4 0 n s (ty p .)

2SK798

Contextual Info: „ r r E . F C T R O N IC S 98D IN C 1 8 9 4 5 D X '~ $ e} - ' 3 ' _ V- i t ' ~ - ,7' ~V r B M M iT liifir fT N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR g s r-; Tfl DESCRIPTION FEATURES DËJ m27S25 GD lfl ci4S i*at 2SK798 The 2SK798 is N-Channel MOS Field Effect Power Transistor

2SK799

Contextual Info: ca,75?5 N E C ELECTRONICS INC 98D 1894S D T- ¡<¡ ~/3 'n - c h a n n e l m o s fie ld e f f e c t po w er t r a n s is t o r "h ä DESCRIPTIO N FEA TU RES De | b 4 2 7 s a s 0018148 1 | ’ The 2SK799 is N-channel MOS Field Effect Power Transistor designed for switching power supplies, DC-OC converters.

2sk791

Contextual Info: 2SK791 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. 10.3MAX. . . H i g h B reakdown Voltage : V ( b r ) dj ;s =850V

1000C

Abstract: 2SK795
Contextual Info: P ow er F-M O S F E T 2SK795 2SK795 Silicon N-channel Power F-M O S F E T • Package Dimensions ■ Features • Low ON resistan ce R ds on : Rds (on) = 3 .5 il (typ.) • High switching ra te : t f = 30ns (typ.) Unit: mm • No secondary breakdow n • High breakdow n voltage

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1