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    2SK293 Search Results

    2SK293 Datasheets (67)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK293
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 128.51KB 1
    2SK293
    		Unknown FET Data Book Scan PDF 92.11KB 2
    2SK2930
    		Hitachi Semiconductor Power Mosfet 5th Generation Original PDF 30.07KB 6
    2SK2930
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 55.89KB 10
    2SK2930
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 83KB 8
    2SK2930-E
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 82.98KB 8
    2SK2931
    		Hitachi Semiconductor Power Mosfet 5th Generation Original PDF 30.07KB 6
    2SK2931
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 55.36KB 10
    2SK2931
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 82.79KB 8
    2SK2931-E
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 82.78KB 8
    2SK2932
    		Hitachi Semiconductor Power Mosfet 5th Generation Original PDF 30.07KB 6
    2SK2932
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 53.52KB 10
    2SK2932
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 82.45KB 8
    2SK2932-E
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 82.44KB 8
    2SK2933
    		Hitachi Semiconductor Power Mosfet 5th Generation Original PDF 30.07KB 6
    2SK2933
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 54.3KB 10
    2SK2933
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 83.01KB 8
    2SK2933-E
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 83KB 8
    2SK2934
    		Hitachi Semiconductor Power Mosfet 5th Generation Original PDF 30.07KB 6
    2SK2934
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 53.89KB 10
    SF Impression Pixel

    2SK293 Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC 2SK2933-E

    2SK2933 - N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2933-E Bulk 195
    • 1 -
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    • 100 -
    • 1000 $1.54
    • 10000 $1.54
    		Buy Now

    Rochester Electronics LLC 2SK2932-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2932-E Bulk 216
    • 1 -
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    • 1000 $1.39
    • 10000 $1.39
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    Rochester Electronics LLC 2SK2935-92-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2935-92-E Bulk 92
    • 1 -
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    • 100 $3.27
    • 1000 $3.27
    • 10000 $3.27
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    Rochester Electronics LLC 2SK2934-92-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2934-92-E Bulk 139
    • 1 -
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    • 1000 $2.17
    • 10000 $2.17
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    Rochester Electronics LLC 2SK2935-93-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2935-93-E Bulk 92
    • 1 -
    • 10 -
    • 100 $3.27
    • 1000 $3.27
    • 10000 $3.27
    		Buy Now
    Find more 2SK293 price and stock on Findchips.com

    2SK293 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK2934 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-557B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds =0.026 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2934


    OCR Scan     		2SK2934 ADE-208-557B D-85622 PDF

    Hitachi DSA00276

    Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G


    Original     		2SK2936 ADE-208-559B 220CFM D-85622 Hitachi DSA00276 PDF

    2SK2933

    Abstract: Hitachi DSA002780
    Contextual Info: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2933 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2933 ADE-208-556 2SK2933 Hitachi DSA002780 PDF

    Hitachi DSA002732

    Contextual Info: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G


    Original     		2SK2932 ADE-208-555B 220CFM D-85622 Hitachi DSA002732 PDF

    Hitachi DSA002780

    Contextual Info: 2SK2931 Silicon N Channel MOS FET High Speed Power Switching ADE-208-554 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2931 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2931 ADE-208-554 Hitachi DSA002780 PDF

    Hitachi DSA002749

    Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D


    Original     		2SK2936 ADE-208-559B 220CFM Tch005-1835 D-85622 Hitachi DSA002749 PDF

    Hitachi DSA002780

    Contextual Info: 2SK2934 Silicon N Channel MOS FET High Speed Power Switching ADE-208-557 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2934 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2934 ADE-208-557 Hitachi DSA002780 PDF

    Contextual Info: 2SK2937 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-560 Target Specification 1st. Edition Features • Low on-resistarice R ds = 0.026 Q t:yp. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO -220FM


    OCR Scan     		2SK2937 ADE-208-560 -220FM PDF

    K2936

    Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-559 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.010 i2 typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1226


    OCR Scan     		2SK2936 ADE-208-559 10fis, K2936 PDF

    Contextual Info: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-555 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.055 Q typ. • H igh speed sw itching • 4V gate drive device can be driven from 5V source Outline 1210


    OCR Scan     		2SK2932 ADE-208-555 PDF

    553c

    Abstract: 2SK2930 2SK2930-E PRSS0004AC-A
    Contextual Info: 2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 Previous: ADE-208-553C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK2930 REJ03G1044-0500 ADE-208-553C) PRSS0004AC-A O-220AB) 553c 2SK2930 2SK2930-E PRSS0004AC-A PDF

    2SK2937

    Abstract: 2SK2937-E PRSS0003AD-A
    Contextual Info: 2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 Previous: ADE-208-560C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK2937 REJ03G1051-0500 ADE-208-560C) PRSS0003AD-A O-220FM) 2SK2937 2SK2937-E PRSS0003AD-A PDF

    2SK2931

    Abstract: 2SK2931-E PRSS0004AC-A
    Contextual Info: 2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 Previous: ADE-208-554C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK2931 REJ03G1045-0500 ADE-208-554C) PRSS0004AC-A O-220AB) 2SK2931 2SK2931-E PRSS0004AC-A PDF

    2SK2936

    Abstract: Hitachi DSA00238
    Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2


    Original     		2SK2936 ADE-208-559B 220CFM 2SK2936 Hitachi DSA00238 PDF

    Hitachi DSA002780

    Contextual Info: 2SK2935 Silicon N Channel MOS FET High Speed Power Switching ADE-208-558 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2935 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2935 ADE-208-558 Hitachi DSA002780 PDF

    Hitachi DSA002758

    Contextual Info: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2933 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2933 ADE-208-556 Hitachi DSA002758 PDF

    Hitachi DSA002758

    Contextual Info: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2932 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2932 ADE-208-555 Hitachi DSA002758 PDF

    Hitachi DSA00276

    Contextual Info: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain


    Original     		2SK2933 ADE-208-556B 220CFM D-85622 Hitachi DSA00276 PDF

    2SK2938

    Abstract: Hitachi DSA0044
    Contextual Info: 2SK2938 L ,2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		2SK2938 ADE-208-561B Hitachi DSA0044 PDF

    2SK2939

    Abstract: Hitachi DSA00117
    Contextual Info: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition June 1, 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK2939 ADE-208-562D Aval005-1897 D-85622 Hitachi DSA00117 PDF

    Contextual Info: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-562 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.020 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source


    OCR Scan     		2SK2939 ADE-208-562 PDF

    Hitachi DSA00280

    Contextual Info: 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C Z 4th. Edition Sep. 1997 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1


    Original     		2SK2930 ADE-208-553C 220AB 6287iPi582500 6287iPi582160 Hitachi DSA00280 PDF

    556B

    Abstract: 2SK2933 2SK2933-E PRSS0003AE-A
    Contextual Info: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 Previous: ADE-208-556B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		2SK2933 REJ03G1047-0400 ADE-208-556B) PRSS0003AE-A O-220C 556B 2SK2933 2SK2933-E PRSS0003AE-A PDF

    2SK2936-E

    Abstract: RG 702 Diode 2SK2936 PRSS0003AE-A
    Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 Previous: ADE-208-559B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK2936 REJ03G1050-0400 ADE-208-559B) PRSS0003AE-A O-220C 2SK2936-E RG 702 Diode 2SK2936 PRSS0003AE-A PDF