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    RD01MUS2B Price and Stock

    Mitsubishi Electric

    Mitsubishi Electric RD01MUS2B-T513

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RD01MUS2B-T513 239,660
    • 1 -
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    • 100 $0.66
    • 1000 $0.44
    • 10000 $0.44
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    RD01MUS2B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		rd01mus2b527mhz15dbtypnov2011+9gp 809 diodegp 839 diode4406 mosfetdiode zener 7.2vrd01mus2b-101gp 520 diodediode gp 805mosfet vhf power amplifiergp 007 diode PDF

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		rd01mus2b527mhz15dbtypgp 809 diode+1gp 007 diode PDF