PF0032 Search Results

Contextual Info: PF0030 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 fiA • Thin Package: 5mm ■ ORDERING INFORMATION P art No. Operating Frequency PF0030 824 to 849 M H z AMPS PF0032 872 to 905 M H z

Hitachi PF0030

Contextual Info: PF0030 Series MOS FET Power Amplifier HITACHI Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 jlA • Thin package: 5 mmt Ordering Information Type No Operating Frequency A pplica tio n PF0030 824 to 849 MHz AMPS PF0032 872 to 905 MHz

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

PF0131

Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231

Hitachi PF0030

Contextual Info: PF0030 Series- Preliminary MOS FET Power Amplifier Module for Mobile Phone • OUTLINE DRAWING PF0030: For AMPS 824-849MHZ PF0032: For E-TACS 872-905MHZ ■ FEATURES • High stability load VSWR = c» • Low power control current 400 /¿A • Thin package 5mm t

Contextual Info: PF0030 Series MOS FET Power Amplifier HITACHI Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 |J,A • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz AMPS PF0032 872 to 905 MHz

Contextual Info: PF0030 Series P re lim in a ry MOS FET Power Amplifier Module for Mobile Phone • O U T L IN E DRAW ING PF0030: For AMPS B24-849MHz PF0032: For E-TACS 872-905MHZ ■ FEATURES • High stability load VSWR = oo • Low power control current 400 //-A • Thin package 5mm t

Hitachi PF0030

Abstract: pf0030 hitachi ADE-208-460 G746 PF0030 PF0032 DSA003712
Contextual Info: PF0030 Series MOS FET Power Amplifier ADE-208-460 Z 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

PF0030

Abstract: Hitachi PF0030
Contextual Info: HITACHI PF0030 Series MOS FET Power Amplifier HITACHI Features • • High stability: Load VSW R = 20 : 1 • • Low power control current: 400 |iA • • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz

Hitachi PF0030

Contextual Info: PF0030 Series MOS FET Power Amplifier HITACHI Rev. 0 Sep. 1993 Pin Arrangement Features • High stability: Load VSWR = 20: 1 • Low power control current: 400 |jA • Thin package: 5 mmt • RF-B2 Ordering Information Type No Operating Frequency Application

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

mosfet 12w smd

Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2