PF0031 Search Results

PF0031

Abstract: hitachi HD PCB
Contextual Info: HITACHI PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI Application PF0031: For NM T900 890 to 925 MHz Features • High stability: Load VSW R = 20:1 • Low power control current: 400 ¡iA • Thin package: 5 mm t Pin Arrangement ADE-208-461 Z

PF0131

Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231

BL01RN1-A62

Abstract: PF0031 Hitachi DSA00175
Contextual Info: PF0031 MOS FET Power Amplifier Module for Mobile Phone ADE-208-461 Z 1st Edition July 1, 1996 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement

bl02rn1-r62

Contextual Info: PF0031 MOS FET Power Amplifier Module for Mobile Pnone HITACHI Application PF0031: For NM T900 890 to 915 MHz Rev. 0 Sep. 1993 Pin Arrangement • RF-B2 Features • High stability: Load VSWR = 20:1 • Low power control current: 400 |jA • Thin package: 5 mm t

Contextual Info: PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI ADE-208-461 Z 1st Edition July 1, 1996 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ~ 20:1 • Low power control current: 400 |J,A • Thin package: 5 mm t

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

mosfet 12w smd

Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2