2N5837 Search Results

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

2N5835

Abstract: 2N5836 M0330 2N5837 210,Motorola MRF5836HX MRF5836HXV VC80 qosmos To-206AF
Contextual Info: MOTOROLA SC XSTRS/R F MfciE b3b?554 D GO^MDTS MOTOROLA -F - 3 SEMICONDUCTOR ä • flOTb 1- 0 / 2N5835 2N5836 2N5837 TECHNICAL DATA The RF Line 2.5 G H z @ 10 m A d c - 2 N 5 8 3 5 2 .0 G H z @ 5 0 m A d c - 2 N 5 8 3 6 1.7 G H z @ 1 0 0 m A dc - 2 N 5 8 3 7

2N5835

Abstract: MRF583 2n6837 2n5836 MRF5836
Contextual Info: MOTOROLA SEM ICONDUCTOR 2N5835 2N5836 2N5837 TECHNICAL DATA The R F L in e 2.5 GHz @ 10 m A dc - 2N583S 2.0 GHz @ 50 m A dc - 2N5836 1.7 GHz @ 100 m Adc - 2N5837 NPN SIL IC O N H IG H -FR EQ U EN CY T R A N SIS T O R S HIGH F REQ U EN C Y T R A N SIS T O R S

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b 3 b 7 2 S 5 0G3flGb3 4 ~ J 34c CDIODES/OPTO 38063 ' SILICON R F fRA N SISTO R DICE continued) D 5" 2C5836 DIE NO. — NPN LINE SOURCE — RF502.198 & This die provides performance equal to or better than that of

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

317A-01

Abstract: 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued CATV, MATV, and Class A Linear Transistors The devices listed below are excellent for Class A linear C A TV/M ATV applications and are listed according to increasing gainbandwidth (fj) . More information concerning the device for your specific linear design needs can be obtained through your local

2n5835

Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

MRF536

Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

mrf502 gold transistor

Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MOTOROLA SELECTION mrf237

Abstract: Motorola transistors MRF630 MRF515 2N3948 MRF604 MRF630 MOTOROLA 2N3553 motorola mrf237 MOTOROLA Transistor MRF630 motorola MRF515
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
Contextual Info: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the