2SC311 Search Results

2SA1249

Abstract: 2SC3117
Contextual Info: JMnic Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SC3117 ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output,converters, Inverters applications

2SA1249

Abstract: 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311
Contextual Info: Inchange Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications

2SC3113

Contextual Info: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package

2SA1249

Abstract: 2SC3117
Contextual Info: SavantIC Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications

Contextual Info: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V

Contextual Info: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Ordering number : EN1060B I s a m y o i 2SA1249/2SC3117 NO.1060B P N P /N P N E p ita x ial P la n a r Silicon T ran sisto rs 160V/1.5A Switching Applications I U ses • Color TV sound ou tput, converters, in v e rters F e a tu r e s - H igh breakdow n voltage

2SC3110

Abstract: marking UV IC
Contextual Info: 2SC3110 h = y y V 7 s5 f 2 S C 3 1 1 N P N x \d $ ¿ r i s y \ , 7 i s —- f l f r / S i N P N E p itax ial P lanar i/i) Wide band Low-noise Amplifier • 4$ 0.65 ±0.15 Features • F 7 y - / / 3 V a * & fT * { ^ o /H ig h fT • 5 'r-iwtzibm&ry'i'-mtts <fct f ?• -

2SA124

Abstract: 2SA1248 2SC3116 ITR03053
Contextual Info: Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1248/2SC3116] · High breakdown voltage.

2SC3112

Abstract: 2sc3112 equivalent 2SC3112 B
Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max)

2SC3112

Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)

2SA1248

Abstract: 2SC3116
Contextual Info: Ordering number:EN1032A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009A Features [2SA1248/2SC3116] · High breakdown voltage.

2SC3113

Contextual Info: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA max · Small package

2SC3112

Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)

2SC3117

Abstract: 2SA1249
Contextual Info: SavantIC Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications

2sa1249

Abstract: 2SC3117
Contextual Info: Power Transistors INCHANGE 2SC3117 Silicon NPN Transistors ‹ Features ECB ﹒ With TO-126 package ﹒ Complement to type 2SA1249 ﹒ Color TV sound output,conveters inverters ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage

2SC3113

Contextual Info: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package

2sc710

Abstract: 2SA1249 2SC3117 ITR03066 ITR03067
Contextual Info: Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1249/2SC3117] · High breakdown voltage.

2sc3114

Abstract: 2SA1246 high vebo
Contextual Info: Ordering number:EN1047B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003A [2SA1246/2SC3114] B:Base C:Collector

2SC1313

Abstract: bc182c NPN 2sC1685 2SC3247K 2SC734GR 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number -5 10 15 20 25 -30 40 Indust Mexi ToshibaCorp Sanyo Elect Sanyo Elect Indust Mexi ToshibaCorp Sanyo Elect ToshibaCorp See Index See Index ~SC~~~I\ ~atsus!!~ta 2SC2998G 2SC3114 2S01623U 2S01835 NB012EL NB012EZ NB012FL

2SA1249

Abstract: pc to tv converter ic 2SC3117
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 APPLICATIONS ·Color TV sound output, converters, inverters.

2sc3114

Abstract: 2SA1246 2sa124
Contextual Info: Ordering num ber:EN 1047B 2SA1246/2SC3114 NO.1047B PNP/ NPN Epitaxial Planar Silicon Transistors High-VEBO> AF Amp Applications Features • High VEBO • Wide ASO and highly resistant to breakdown { : 2SA1246 Absolute Maximum Ratings/Ta = 25°C Collector to base voltage

2SA1249

Abstract: 2SC3117
Contextual Info: Inchange Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA1249 ・High breakdown voltage ・Large current capacity APPLICATIONS ・Color TV sound output;converters; Inverters’ applications