2SC4003 Search Results

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

2SC4003

Contextual Info: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range

2SC4003

Abstract: bau 95
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity

transistor 123

Abstract: 2SC4003 BR 123
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SC4003 TRANSISTOR NPN TO-251 TO-252-2L 123 FEATURES • High hFE hFE=60 to 200 · low VCE(sat) VCE(sat)=0.6V 123 123 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2044B

Abstract: 2SC4003
Contextual Info: Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SC4003] 1 : Base

2SC4003

Contextual Info: 2SC4003 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 200 mA Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃

2SC4003

Abstract: hFE CLASSIFICATION Marking 400mA-1
Contextual Info: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4003 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1

2044B

Abstract: 2SC4003 ITR06242 ITR06243 STF3
Contextual Info: Ordering number:ENN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2045B [2SC4003] 2.3 5.5 1.5 6.5 5.0

Contextual Info: Transistors SMD Type Product specification 2SC4003 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Excellent hFE linearity

2044B

Abstract: 2SC4003 ITR06242
Contextual Info: 2SC4003 Ordering number : ENN2959B NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C

hfe60

Abstract: hFE transistor 200 hFE-60
Contextual Info: 2SC4003 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features hFE=60 to 200 High hFE low VCE(sat) VCE(sat)=0.6V TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: Ordering number : EN 2 9 5 9 A 2SC4003 N 0.2959A SA \Y O N P N T rip le D iffused P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications Features . H ig h b re a k d o w n v o lta g e •A doption of M B IT p rocess • E x c e lle n t hpE lin e a rity

2SC4003

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC4003 TO-251 TRANSISTOR（NPN） FEATURES 1. BASE ∙ High hFE hFE=60 to 200 2. COLLECTOR ∙ low VCE sat VCE(sat)=0.6V 3. EMITTER 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2959A

Abstract: 2044b 2SC4003
Contextual Info: Ordering n u m b e r:E N 2 9 5 9 A 2SC4003 N 0.2959A SAiYO NPN Triple Diffused P lanar Silicon Transistor i High-Voltage Driver Applications F e a tu re s . High breakdown voltage •Adoption of MBIT process •Excellent hpE linearity A b so lu te M axim u m R a tin g s a t Ta = 25°C

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

2sb892

Abstract: 2sc4645 2sC4389 2SB1406
Contextual Info: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

2SD636

Abstract: SN1402 RT1N141C DTC124ES DTC114ES UN4211 DTC114EK RT1N441S DTC144ES 2SC2456
Contextual Info: - 162 - s « Type No. a « Manuf. = 3 SANYO 5 TOSHIBA m. NEC B H HITACHI S f FUJITSU i & T MATSUSHITA £ m MITSUBISHI □ — A ROHM 2SC 3398 = Ì* SN1402 UN2211 RT1N141C DTC114EK 2SC 3399 ^ h m RN1204 UN4213 RT1N441S DTC144ES H if RN1203 UN4212 RT1N241S DTC124ES

2sD1915

Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
Contextual Info: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

D4242

Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
Contextual Info: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)