2SC3979 Search Results

2SC3979

Abstract: 2SC3979A 10w 900MA
Contextual Info: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC3979 base voltage 2SC3979A Collector to 2SC3979 emitter voltage 2SC3979A

Contextual Info: Power Transistors 2SC3979, 2SC3979A 2SC3979, 2SC3979A S ilicon N P N Trip le -D iffu se d Planar Type P ack age D im ension s H igh B rea k do w n V o lta g e , H igh S p e e d S w itch ing U n it ! m m 4 .4 m a x . 10 2 m ax . • F e a tu re s 2 9 m ax .

2sc3979

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2SC3979

Abstract: 2SC3979A
Contextual Info: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Symbol Rating Unit VCBO 900 V 2SC3979 2SC3979A

2SC3979

Abstract: 2SC3979A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 5.5±0.2 2SC3979 Collector-base voltage (Emitter open) Rating Unit VCBO

2SC3979

Abstract: 1405Q 2SC3979A
Contextual Info: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC3979 base voltage 2SC3979A Collector to 2SC3979 emitter voltage 2SC3979A

2SC3979

Abstract: 2SC3979A 10w 900MA
Contextual Info: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 16.7±0.3 14.0±0.5 • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation ASO • Satisfactory linearity of forward current transfer ratio hFE

D4242

Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
Contextual Info: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)

2SC3979

Abstract: 2SC3979A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 5.5±0.2 2SC3979 Collector-base voltage (Emitter open) Rating Unit VCBO

2SC3979

Contextual Info: SavantIC Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high breakdown voltage high-speed switching applications

2SC3979

Contextual Info: Inchange Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation APPLICATIONS ・For high breakdown voltage high-speed

2SC3979

Abstract: npn 1000V 15A 2SC3979A 4l20
Contextual Info: Power Transistors 2SC3979, 2SC3979A 2 S C 3 9 7 9 , 2S C 3979A Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s High B re a k d o w n V o lta g e , High S p e e d S witching • F e a tu re s • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Features 5.5±0.2 Collector-base voltage (Emitter open) Rating Unit

2SC2499

Abstract: 2SC3531 2SC3098 3771 nec 3771 2sc3355 hitachi 2SC4811K 2SC3761 2SC3124 2sc3841
Contextual Info: - 172 - m & a Type No. 2SC 3751 , 2SC 3752 -r 2SC 3753 w 2SC 3754 y 2SC 3755 *'' 2SC 3756 ✓ Z. Z Z. Z Z Z 2SC 3766 2SC 3769 2SC 3770 ¿ r 2SC 3773 2SC 3774 Z Z Z 2SC 3776 / 2SC 3777 2SC 3778 as % as as ^ ~ 2SC 2SC 2SC 2SC 2SC 2SC3979 2SC3734 2SC3052 2SC4423

Contextual Info: 2SC3979 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900â V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor Electronic ballast

Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007
Contextual Info: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability

2SC4290A

Abstract: 2SC4333 j 4310 nec 4312 2SC3586 2SC3153 2SC3997 4303A 2SC3536 2SC3535
Contextual Info: - m tt % Type No. 2SC 4290 y H £ 2SC 4291 X h n 2SC 4292 , = # 2SC 4293 > = & 2SC 4294 H # 2SC 4295 n —A 2SC 4296 « Manuf. ^ yy*ry = * SANYO 2SC3997 Jï TOSHIBA B R NEC B ÎL HITACHI * ± FU JIT S U a fó T MATSUSHITA 2SC4290A 2SD1730 2SD1731 2SC4291 2SM73D

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ cation VcBO VcEO (V) (V) lc VcE (A) (V) (sai) Package (No.) lc (A) Ib tf (i*s) MT3 (D43) (mA) MT4 (D46) TO r 0 -220(a) T 0 2 2 0 E T0-220D N T ype