2SC5128 Search Results

Contextual Info: Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 800

220E

Abstract: 2SC5128
Contextual Info: Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SC5128

Abstract: 220E
Contextual Info: Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ cation VcBO VcEO (V) (V) lc VcE (A) (V) (sai) Package (No.) lc (A) Ib tf (i*s) MT3 (D43) (mA) MT4 (D46) TO r 0 -220(a) T 0 2 2 0 E T0-220D N T ype

2SC5282

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) A p p li­ cation VcBO VcEO (V) (V) lr (A) (V) lc (A) High­ speed switch­ ing P ack ag e (No.) VcE(sat) Ib (mA) l/JS) MT3 (D40) MT4 (D41) r 0 -220(a) T0220F(a) TO-220E TO-220D N Type

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2SC4420

Abstract: 2sc5158
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Package (No.) VcE(sat) Appli­ cation H igh­ sp eed sw itch­ ing VcBO VceO lc (V) (V) (A) ti (V) lc !b (A) (mA) ißs) TO-220F(a) (D55) TO-220E (D59) 450

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SC5158

Abstract: 2SC5217 2SC5159 2SC3668 2SC3869 2SC4026 2SC4533 2SC4768 2SC4953 2SC4961
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ VcBO VcEO lc VcE (sat) cation (V) (V) (A) (V) Package (No.) tf lc (A) ( i*s ) Ib MT3 (D43) (mA) TO MT4 r 0-220(a) -220F(a) TO-220E TO-220D N Type