2SD592 Search Results

2SB621A

Abstract: 2SB621 2SD592 2SD592A
Contextual Info: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.

2SD592

Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A
Contextual Info: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: Transistors 2SD0592A 2SD592A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

2SB621

Abstract: 2SB621A 2SD592 2SD592A
Contextual Info: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD0592 2SD592 Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC

Contextual Info: J M mm ¡¡¡f ! 2SB621.A 2SD592,A rB Hl I SILICON TRANSISTORS T O -9 2 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A SC-43A
Contextual Info: Transistor 2SD0592A 2SD592A Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0621A (2SB621A) 4.0±0.2 5.1±0.2 5.0±0.2 • Large collector power dissipation PC • Low collector to emitter saturation voltage VCE(sat)

Silicon PNP epitaxial planar type For low-frequency

Abstract: 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

IC tl 072

Abstract: 2SB0621 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: Transistors 2SB0621 2SB621 , 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SD592

Abstract: 2SB621 2SB621A 2SD592A
Contextual Info: 2SB621,A 2SD592,A k. ' . ; •’■;■■ ■,} > '•■ 5?# K V - - . ;-; ’ « ' 5 sT; fv s-V-Îï ” ■-'i, SILICON TRANSISTORS TO-92 . ■ í í /*:■■? V~- 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for

2SB0621

Abstract: 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and