2SD592A Search Results

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.

2SD592

Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A
Contextual Info: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: Transistors 2SD0592A 2SD592A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

2SB621

Abstract: 2SB621A 2SD592 2SD592A
Contextual Info: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector to emitter saturation voltage VCE(sat)

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A SC-43A
Contextual Info: Transistor 2SD0592A 2SD592A Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0621A (2SB621A) 4.0±0.2 5.1±0.2 5.0±0.2 • Large collector power dissipation PC • Low collector to emitter saturation voltage VCE(sat)

Silicon PNP epitaxial planar type For low-frequency

Abstract: 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: Transistors 2SB0621 2SB621 , 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SC 8050

Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi­ C0h r n in max (MHz) (MHz) COMPLE­ MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SB621A

Abstract: 2SB621 2SD592 2SD592A
Contextual Info: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC875 E

Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60

2sc1175

Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#

2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

2SC200I

Abstract: D471 2SA593 2sc1175 2SC1346 92PU01A 92PU45 2SA659 2SA719 2SA730
Contextual Info: Medium Power Amplifiers and Switches TYPE ' FOLA 1 NO. RJTY CASE MAXIMUM RATINGS W IC VCEO mW (A) (V) HFE aùm VCB<m «) IM I 1C (*A) VCR (V) (V) (A) fT min (MHz) tM X Cok COMPLE 1 m x MENTARV TV PIS <PF) 2 SCI 004 2 SCI 175 2SC1209 2SC1317 •2SC1318 M