TO-92B
Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55
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2sc9382sc9592sc10q82sc1175+72sc12092sc13172sc13182sc13462sc13472sc1672to-92b
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2sc1175
Abstract: 2sc100b 2SC959N 2SC1346 2SC938 2SC959 2SD471 92PU01A 92PU02 92PU45
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M RATING S H P O L A R IT Y TYPE CASE 2SC934 2SC938 2SC959 2SC1008 N N N N TO-92B TO-92B TO-39 TO-39 300 250 700 800 0.3 0.2 0.7 0.7 15 60 80 60 40 50 40 80 560# 232# 200# 240# 20 50 200 50 5 1 5 2 0.5 2 0.7
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2sc934o-92b2sc9382sc959+112sc10082sc11752sa6592sc12092sc100b2sc959n2sc13462sd47192pu01a92pu0292pu45
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2SC959
Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Contextual Info: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml
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2sa6062sa6072sc9592sc960+6607/2sc9592scs09c959transistor ft 96021162sc999
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sc1175
Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#
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t-27-012sc934o-92b2sc938+112sc9592sc10082sc11752sa65992pu452sb5642sd4712sc100b2sc134692pu01a2sa719
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2sc498
Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237
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2n6428o-92a2n6714o-237+122n67262n67152n67272n67162sc4982sc8752sa5032sc1175ft5012sa5322sa6062sa708
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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2SA616
Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604
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2sa6032sc9432sa6042sa605+162sa6062sc9592sa6072sc9602sa6082sa6092sa6162sa6202sc10142sc10792sa6882sc634a2sa6782sc10132sc1008a2sa628a
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2sa593
Abstract: 2SD155 2SC960 2SC959 2SD150 2SC943K 2SC594 2SC943
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sd155ra-40p600ns2sa593+62sc9602sc9592sd1502sc943k2sc5942sc943
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2sd 5023
Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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13llsdto-392sd 5023bc 9013+8bc 9013 g2sc 90122218acs9012bc526transistor bc 945bc287transistor bc345
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92PU
Abstract: 92PU05 TQ-237 92PU06 2SA598
Contextual Info: MICRO ELE CTRONICS LTD 3I E I> B b O ^ lT ä S 0000=121 2 D M E H K Medium Power Amplifiers and Switches ~T-2Sl-ot TYPE NO. P O L A R IT Y T -3 3 -D / CASE M A X IM U M R A T IN G S Pd mW 'c (A) H V CEO (V) min V C E (SA T ) FE max 'c Im A) VCE (V) max
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o-92b92pu92pu05tq-237+292pu062sa598
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2sc642ao-204aa/to-32sc6432n4030die+122c40302sc643a2sk10452sk10482sk10502sk10442sd27912sk10112sd24982sd2992sd3002sd373
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SC946
Abstract: 2SC968 2SC911 2SC901 2SC935 2SC917 2SC901A 2SC919 2SC931 2SC914
Contextual Info: Page 1 of 3 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 50W 2SC901 200 6 5A 150 25 4 5A 50* (Tc=70ºC)
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2sc9012sc901a2sc9022sc903+142sc9042sc9052sc9062sc9072sc907a2sc9082sc9462sc9682sc9112sc9352sc9172sc9192sc9312sc914
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92PU07
Abstract: TO-237 MICRO ELF-002
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. P O L A R IT Y T-27-01 CASE M A X IM U M R ATIN G S Pd ImW 'c A) H V CEO (V) V CE(SAT) FE min max 'c Im A ) V CE (V) max IV ) 'c (A) f T m in
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t-27-01o-92b92pu07to-237 micro+1elf-002
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2sc1175
Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY CASE Pd IC mW (A) VCE(sat) HFE MAXIMUM RATINGS IC VCEO VCE (V) min max (mA) (V) . fT Cob COMPLE min max MENTARY (V) (A) (MHz) (PF> TYPE max 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237
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2n6428o-92a2n6714o-237+112n67262n67152n67272n67162sc11752sc8752n67282sa6062sa5322sa532 complementary2sa708
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NEC 2SC959
Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18
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mps-a06fmmt-a06fmmta06mmbta06+13mpsa06pmbta065mbta06nec 2sc959bfr392sc309100nast44low-power silicon npn2sc1008a2sc2274k2sc3329-bl2sc959
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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