TO-237a
Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N
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2sc10082sc1175o-92b2sa659+112sc12092sc13172sa7192sc1318to-237a92pu51a2sa59892pu45to-92b2sc134692pu01a
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2A 5A10
Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25
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bsg113qgq377asnse181pn3568+14tn2017o-202o-237tn21022n53212a 5a10nsd106nsd104nsd6178to-202 transistor npn2n4239d40d10d40d11d40d13
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2sc1175
Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#
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t-27-012sc934o-92b2sc938+112sc9592sc10082sc11752sa65992pu452sb5642sd4712sc100b2sc134692pu01a2sa719
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2sc1175
Abstract: 2sc100b 2SC959N 2SC1346 2SC938 2SC959 2SD471 92PU01A 92PU02 92PU45
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M RATING S H P O L A R IT Y TYPE CASE 2SC934 2SC938 2SC959 2SC1008 N N N N TO-92B TO-92B TO-39 TO-39 300 250 700 800 0.3 0.2 0.7 0.7 15 60 80 60 40 50 40 80 560# 232# 200# 240# 20 50 200 50 5 1 5 2 0.5 2 0.7
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2sc934o-92b2sc9382sc959+112sc10082sc11752sa6592sc12092sc100b2sc959n2sc13462sd47192pu01a92pu0292pu45
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92PU
Abstract: 92PU05 TQ-237 92PU06 2SA598
Contextual Info: MICRO ELE CTRONICS LTD 3I E I> B b O ^ lT ä S 0000=121 2 D M E H K Medium Power Amplifiers and Switches ~T-2Sl-ot TYPE NO. P O L A R IT Y T -3 3 -D / CASE M A X IM U M R A T IN G S Pd mW 'c (A) H V CEO (V) min V C E (SA T ) FE max 'c Im A) VCE (V) max
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o-92b92pu92pu05tq-237+292pu062sa598
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b0349
Abstract: B0817 1/transistor b0349 to-53 2N3577 blx10 diode 300U 2S078 B0379 b0371
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT5512 SOT5512 SOT5912 B0377-25 2S01083 2S0975 B0321 B0321 ~g~~~ 25 30 2S01779 2N3138 2N3140 2N3142 2N3144 BOY11 BOY11 2S012A ~~~1~8U 35 40 BSS15 2N5320 NS06178 2N6179 S2N4150 S2N4150-1 BOB29-10 BOB29-6
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bc441-5b0377-102n55982s078+15nsou052n671692gu0592pu05b0377-162s078-111b0349b08171/transistor b0349to-532n3577blx10diode 300ub0379b0371
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ztx450 equivalent
Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
Contextual Info: Z E T E X S U P ER E LIN E CROSS R EFER EN C E LIST This Cross-Reference List is intended as a guide to the selection of a direct or near equivalent device from the Zetex Super E-Line Range. Individual device specifications should be checked in detail before
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2n67142n67152n67162n6717+162n67182n67192n67202n67212n67222n6723ztx450 equivalenttransistor equivalent ztx651ztx650 equivalentmps651 equivalentmps751 equivalentztx751 equivalentztx749 equivalenttransistor ztxmpsw92 equivalentztx zetex
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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92PU07
Abstract: TO-237 MICRO ELF-002
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. P O L A R IT Y T-27-01 CASE M A X IM U M R ATIN G S Pd ImW 'c A) H V CEO (V) V CE(SAT) FE min max 'c Im A ) V CE (V) max IV ) 'c (A) f T m in
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t-27-01o-92b92pu07to-237 micro+1elf-002
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2N6591
Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120
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bsg1130g0377nse181pn3568+7tn2017tn21022n5321d40d10d40d11d40d132n6591
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2N4351 MOTOROLA
Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132
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2sk355irf2412sk357buz30+15buz43airf6232sk358buz602sk3822n4351 motorolamrf9663sk1242n3819 motorolabfs283sk45bsv812n4221 motorolabc547 motorola3sk76
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2N3567
Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA
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b501l3a0370mmt-27-cit-27-01+102n3567nsdu07transistor 2n3569npn transistors" 2n3567nsd102nsd4582n35682n356992pu393d40e5
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"NPN Transistors" 2n3567
Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40
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2n6992n16132n17112n1890+13to-202tn3742to-237npn transistors" 2n3567nse459nsdu05nsd4582n6718 to-2372n35692n65932n53362n3567mpsw06
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