2SD150 Search Results

2SD1500

Abstract: IRF15
Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER 2SD1500 INDUSTRIAL APPLICATIONS Unit in it HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High DC Current Gain 1Q.3MAX. 0 3 .6 ± a e : h F E = 1 0 0 0 ( M i n . ) (VCE=2V, Ic=10A) . Low Collector Saturation Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER -2SD1509 INDUSTRIAL APPLICATIONS Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 8. 3 MA X , &8 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A)

2SD1505

Abstract: 2SB1064
Contextual Info: Inchange Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1505

Abstract: 2SB1064
Contextual Info: SavantIC Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1506

Abstract: 2SB1065
Contextual Info: SavantIC Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING

2SB1064

Abstract: 2SD1505
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 APPLICATIONS ·Designed for low frequency power amplifier applications.

EF 6802 P

Abstract: 2sd1864 2SB1066M 2SB1243 2SD1507M 2SB1066
Contextual Info: ROHM CO L T D — 4DE J> • 70201^ h 7 > V X £ /Transistors 2SD1507M / 2SD1864 - 2SD1507M 1 a O U IO O H ODGSÖTB T B R H M - 7 : 27-2l - J L kfÇ à rV T Jl 78I^-^NPN y lJ = l > Power Amp.

d1508

Abstract: 2SD1508
Contextual Info: 2SD1508 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1508 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1509

Contextual Info: 2SD1509 TO SH IBA 2 S D 1 509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Low Saturation Voltage : v CE(sat) = 1-5V (Max.)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1509 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

Contextual Info: H ITACH I 2SD1504 S I L I C O N N P N E F t T A X iA L L O W F H S Ô U E N C Y A M P L I F I E R . M U T IN G .*.2*4.*.- * C-* í. u - : vV; b*\t •! > . . s?-',.-.-*- i SPAK ■ A 8SO LU TÊ MAXIMUM RATINGS (T^Z.^c:, . S ïtxî;

SB1243

Abstract: 2SD1507M
Contextual Info: N "7 > y 7, $ /Transistors 2SD1507M 2SD1864 2SD1507M/2SD1864 X v 7 \ t f \ s —T f ó NPN y ' j a > h 7 > v * * Epitaxial Planar NPN Silicon Transistors ^Q^JitÉtyiÆ /Medium Power Amp. • ft* • ^ V J f^ jiO /'D im e n s io n s U nit : mm) 1) VcE(sat)

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2sd1503

Abstract: 2SD1506
Contextual Info: ROHM CO 40E LTD 7 a 2 â cn ci D ODDSÔÔT 1 BRHN 2SD1506 h 7 > y ^ $ / T ransistors -7 ^ 3 3 - 0 7 2SD1503 I N P y ' J - 1> b7 > y Z $ N Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor • ÿfïïi'Î&IS/Dimensions Unit : mm

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1509 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

2SD1508

Abstract: 106y
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS (DARLINGTON POWER) 2SD1508 INDUSTRIAL APPLICATIONS Unit in mm TO-126 (similar) COMPLETE MOLD PACKAGE (IS TYPE). This IS type transistor series is new product formed by thinly and uniformly coating the flange with molding

D1509

Abstract: 2SD1509
Contextual Info: 2SD1509 TOSHIBA 2 S D 1 509 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE D AR LIN G TO N M ICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS Unit in mm SW ITCHING APPLICATIONS 5.8 POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h;pE = 2000 (Min.)

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SD1501

Abstract: 2SD1504
Contextual Info: HITACHI 2SD1504-Sil_ICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER. MUTING I. E riiiiiif ’ C o ltfiio e 3. Him liXnvM vt* in miri MAXIMUM COLLECTO R DISSIPATION CURVE ABSO LU T E MAXIMUM RAT1MGS <Ta^25*C) ]icm Symbol 2SD15ÍW Unit Collector to b¡ue voliate

2SB1064

Abstract: 2SD1505
Contextual Info: SavantIC Semiconductor Product Specification 2SB1064 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1505 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Contextual Info: h ~p > y 7, $ /T ra n sisto rs 2SD1507M/2SD1864 2SD1507M NPN v U □ > h 7 > y / $ 4, ^ J i ilPiffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistors • W IJ ^ iiE l/D im e n s io n s U n it: mm 1) V ce ( sa t )= 0.5V (Typ ) t l & l ' o (at Ic / I b =2A /0.2A )

Contextual Info: 2SD1502 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B 2SD1502 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G 300 V Collector to em itter voltage VCE0 300 V

2SD1508

Contextual Info: TO SH IBA 2SD1508 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 508 PULSE MOTOR DRIVE, HAMMER DIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 8.3 MAX. POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE —4000 (Min.)

Contextual Info: T O S H IB A 2SD1509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2 S D 1 509 MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS U nit in mm SWITCHING APPLICATIONS 8.3MAX. ¿3.1 ±0.1 5.0 PO W ER AM PLIFIER APPLICATIONS • High DC C urrent Gain : h p g = 2000 (Min.)