2222a
Abstract: 2n h 2222a 2218A 2219a z222a tr 2222a tr 2219a 2N2218A 2N2219A 2n 2222a
Contextual Info: 2N 2218 A 2N 2219 A SILICON PLANAR NPN • HIGH-SPEED SWITCHES The 2N 2218A, 2N 2219A, 2N 2 2 21A and 2N 22 22A are silicon planar epitaxial NPN tran sistors in Jedec TO-39 for 2N 22 18 A and 2N 2219A and in Jedec T O -1 8 (fo r 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col
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2222a2n h 2222a2218a2219a+6z222atr 2222atr 2219a2n2218a2n2219a2n 2222a
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2222 NPN
Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905
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2n7082n7092n753npn50+72222 npn2222a npn2n h 2222a2222a2221anpn 2907a2369a
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2n h 2222a
Abstract: 2N2218 2222a 2N5581 ip 2222A
Contextual Info: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s
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2n2218a2n22192n22222n2218+7/2n2219o-205ad/19/19a/22/22a2n h 2222a2222a2n5581ip 2222a
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TT 2222 npn
Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904
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2n7082n7092n753000000000000a+7l000000t0-18tt 2222 npn709a2n h 2222a2n6982222 npn
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2222A
Abstract: 2n h 2222a 2221A 2219a 2222a NPN 2n2222a 2N2219A 2N2218A 2222A transistors
Contextual Info: 2N 2218 A 2N 2219 A 2N 2221A SILICON PLANAR NPN • “ *» HIGH-SPEED SWITCHES The 2N 2218A, 2N-2219A, 2N 2221 A and 2N 2222A are silicon planar epitaxial NPN tran sistors in Jedec TO-39 for 2N 2218A and 2N 2219A and in Jedec T O -18 (for 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col
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2n-2219aeix10150ma2222a+82n h 2222a2221a2219a2222a npn2n2222a2n2219a2n2218a2222a transistors
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2T2219
Abstract: 2T2218 D2T2218 2T2904 D2T2219A 2T2219A 2T2905
Contextual Info: T Y P ES D2T2218, 2218A. D2T2219, D2T2219A D U A L N -P -N S ILIC O N TR A N S IS TO R S B U L L E T I N N O . D L -S 7 3 1 1 9 7 5 , M A R C H 1 9 7 3 TWO G E N E R A L PURPOSE TR AN SISTO RS IN O NE PACKAGE • Each Triode Electrically Simliar to 2N 2218, 2N 2218A ,
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d2t2218d2t2218ad2t2219d2t2219a+62t29042t2904a2t29052t22192t22182t2219a
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2N 2222 A NPN, TO-18
Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A
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2n7082n7092n7532n 2222 a npn, to-18+62n22222n h 2222a2222a npn706a709a2222 npn
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6 volt npn
Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
Contextual Info: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100
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2n2218/212n2218a/21a2n2219/222n2219a/22a+11dn2219a/22a150ma100khz100mh100ma6 volt npndp2907atransistor 60 voltnpn transistor 60 voltdn2219ageometry 450
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2n h 2222a
Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT
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2n917o-2372n h 2222atransistor 2222a to-92+7transistor 2222atransistor 2n2222 2n2222a to-92 npnmml 600pnp 2n 2222 transistor33t4
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PACKARD 58 JC3
Abstract: PACKARD 58 vch 6A14VT JC201 14VT packard 56 SERIES current rating
Contextual Info: V-Series Switch Product Highlights: Maximum sealing protection with dual seals around lamps and rocker stem certified to IP66 & IP68. Optional panel seals for additional protection. Silver plated butt contact mechanism provides 50 to 100 thousand electrical cycles and a variety of different
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packard 58 jc3packard 58 vch6a14vtjc201+214vtpackard 56 series current rating
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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transistor vergleichslistetransistor vergleichsliste ddrtelefunken transistorenvalvo+6bsw69vergleichsliste ddrvergleichslistetransistor bc-148rft transistorentransistoren ddr
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C735
Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
Contextual Info: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0
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bs90008s9300bs93002n2221a+122n2222a2n18932n1613c735c749npn c460c644c495c-725cv7580c496c727
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253bs93002n2219ac495 transistorc7352n1893 equivalentc644c735 o2n2222 hfec749transistor c633npn c460
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BEL 100N TRANSISTOR
Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ
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143s3tfl2n2218285max2n2219a+152n3501tv20min22min2n9182n929bel 100n transistorbel100nbel 100n transistor npnbel 100n2n 2222a transistorbel100transistor bd 657bf200 transistortransistor bf 245bd115
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2n222a
Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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zt1480zt1482zt1484zt1486+15zt1488zt14902n30552n34392n34402n34412n222azs1062n222a npn transistorzs90n22222n2223transistor 2n222an3055zs132
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc10n12tfk 404t1s58+8bci83lgermanium diode oa 182tfk diodetransistors 2n 945v744akai amplifiertis62bci09
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BEL100N
Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218
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2n2218285max2n2219a2n2221a+15222storbel100n2n35002n35012n3501tv20minbel 100n transistor41 bfbel100bel100n transistortransistor bf 245bel 167 transistorbel 100nbel bf200bf200 transistor
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transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
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5flmfl35gdetrdf\j515tqr2n327an328a+162n329a2n3302n7262n8632n9392n945transistor t05n2907n2907a2n3040t05 transistor2n2927a2n22802n30642n19212n3058
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PMN1-35R-3K
Abstract: CP-051
Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. P AR T N U M B E R S TU D S IZ E P M N 1-3R-3K M3 PMN1-35R-3K M3, E P M N 1-4R-3K M4 P M N 1-BR-3K ME P M N 1-6R-3K M6 WIRE RANGE mmz
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pmn1-35r-3k-011mcp-051ca-800+622-18awgcp-860cp-b61cp-871cp-b71/ee52164
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s parameters of 2N2222
Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
Contextual Info: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c
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2n22222n2218a2n22192n2219a+82n2222as parameters of 2n22222n2222 equivalent2n2222 z parameters2n2219 equivalent2n2219a equivalentequivalent of 2n22222n2222 test circuit
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2N2218A
Abstract: 2N2219A 2N2218A-2N2219A
Contextual Info: IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2218A 2N2219A TO-39 Boca Semiconductor Corp. BSC Switching And Linear Application DC And VHF Amplifier Applications
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2n2218a2n2219a25degc-120+12n2218a-2n2219a
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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ICH6
Abstract: 82801FB ICH6 SiS chipset 486 RW652 re-enumeration
Contextual Info: Intel I/O Controller Hub 6 ICH6 Family Datasheet For the Intel® 82801FB ICH6, 82801FR ICH6R and 82801FBM ICH6-M I/O Controller Hubs January 2005 Document Number: 301473-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
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82801fb82801fr82801fbmich6+482801fb ich6sis chipset 486rw652re-enumeration
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