UI9600 Search Results
UI9600 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high |
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13002AH 13002AH 13002AHL-TM3-T 13002AHL-T60-F-K 13002AHL-T92-F-B 13002AHL-T92-F-K QW-R223-019 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high |
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13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high |
Original |
13002AH 13002AH 13002AHL-TM3-T 13002AHL-T60-F-K QW-R223-019 | |
3dd13003
Abstract: UI9600
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O-220 O-220 3DD13003 100mA, 250mA UI9600) 3DD13003 UI9600 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002N8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR |
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O-126 3DD13002N8D O-126 200mA 200mA 100mA UI9600) | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003N96 TO-92 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR |
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3DD13003N96 250mA UI9600) | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13003LD36 TRANSISTOR NPN TO-251 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1.BASE 2.COLLECTOR |
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O-251 3DD13003LD36 O-251 250mA UI9600) | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L3D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR |
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O-126 3DD13003L3D O-126 250mA UI9600) | |
BLD112D
Abstract: BLD112D to-92 ICA10 si BLD112D
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BLD112D BLD112D BLD112D to-92 ICA10 si BLD112D | |
BLD123D
Abstract: CI011 BLD123
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BLD123D O-126 O-126 BLD123D CI011 BLD123 | |
BLD112DContextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification BLD112DL 低压系列晶体管/ L SERIES TRANSISTORS ●特点: 耐压高 ●FEATURES: ●应用: 开关速度快 符合 RoHS 规范 安全工作区宽 •HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT |
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BLD112DL BLD112D | |
BLD128D
Abstract: BLD128D application bld128 VCE1 ef 25 transformer
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BLD128D O-220 O-220 BLD128D BLD128D application bld128 VCE1 ef 25 transformer | |
bul6822
Abstract: bul6822 si l bul6822 equivalent Shenzhen SI Semiconductors VCE1
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BUL6822 bul6822 bul6822 si l bul6822 equivalent Shenzhen SI Semiconductors VCE1 | |
BLD123D
Abstract: BLD123 BLD123DL TO126
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BLD123DL O-126 O-126 BLD123D BLD123 BLD123DL TO126 | |
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BUL6802
Abstract: BUL680 BUL6802L BUL68 TO126
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BUL6802L O-126 O-126 BUL6802 BUL680 BUL6802L BUL68 TO126 | |
BLD128D
Abstract: bld128 BLD128Dfp Shenzhen SI bld 01ac
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BLD128DFP O-220FP Dis10 O-220FP BLD128D bld128 BLD128Dfp Shenzhen SI bld 01ac | |
BUL6820A
Abstract: BUL68
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BUL6820A BUL6820A BUL68 | |
BLD137D
Abstract: BLD137 BLD137DA BLD13
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BLD137DA 700VV O-220 O-220 BLD137D BLD137 BLD137DA BLD13 | |
100-01A
Abstract: TJ40A MJE1300 MJE13007A Shenzhen SI Semiconductors, LTD mje 31
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MJE13007A O-220 O-220 100-01A TJ40A MJE1300 MJE13007A Shenzhen SI Semiconductors, LTD mje 31 | |
MJE-13001
Abstract: MJE13001 MJE13001H Shenzhen SI Semiconductors
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MJE13001H MJE-13001 MJE13001 MJE13001H Shenzhen SI Semiconductors | |
Fluorescent BALLAST MJE13003
Abstract: MJE13003 transistor mje13003 mje13003 ballast MJE13003 2A MJE13003 transistor TO-262
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MJE13003 O-262 O-262 Fluorescent BALLAST MJE13003 MJE13003 transistor mje13003 mje13003 ballast MJE13003 2A MJE13003 transistor TO-262 | |
SI 122 D
Abstract: electronic ballast with MJE13007 Fluorescent BALLAST MJE13007 mje13007 ballast MJE13007 electronic ballast MJE13007 Si MJE13007
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MJE13007 O-263 O-263 SI 122 D electronic ballast with MJE13007 Fluorescent BALLAST MJE13007 mje13007 ballast MJE13007 electronic ballast MJE13007 Si MJE13007 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005ND56 TRANSISTOR NPN TO-220 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR |
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O-220 3DD13005ND56 O-220 500mA UI9600) | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR |
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O-126 3DD13003L8D O-126 250mA UI9600) | |