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    0GLB713 Search Results

    0GLB713 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BEE D • 023b3SQ 0Glb712 3 H S I P BCX54 ■BCX 56 NPN Silicon AF Transistors SIEMENS/ SPCL-. SEMICONDS • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 51-•• B C X 53 PNP


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    023b3sq0glb712bcx5423b32d+1gq1l71s PDF

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    ami6g16sami6g33sami6g41sami6g70s+16ami6g106sami6g150sami6g202sami6g333ami6g471ami6g603digital gate emulator using 80858086 microprocessor book by a k ray180 nm cmos standard cell library amiic1732dl021m91c360ami 0.6 micron3682dami equivalent gatesic/tda7388 equivalent PDF

    CXK58257

    Abstract: cxk56257b
    Contextual Info: SONY CXK58257BTM/BM -7QLLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    cxk58257btm/bm-7qllb/10llb32768-wordcxk58257+5cxk58257btmcxk58257bm70llb10llbcxk56257b PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual


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    g01b7dbkm428c258110ns130ns+3150ns40-pin40/44-pin PDF