C2983 Search Results

C2983

Abstract: C2983Y KTC2983D marking K
Contextual Info: SEMICONDUCTOR C2983D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C2983 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C2983 C2983D 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :

C2983

Abstract: hFE kec KTC2983L C2983Y
Contextual Info: SEMICONDUCTOR C2983L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C2983 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C2983 C2983L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :

C2983

Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: C2983 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C2983 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。

C2335

Abstract: C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499
Contextual Info: ADS 1.2 Build Tools - Errors and Warnings Release 1.2 - 2nd September 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM Developer Suite ADS version 1.2 and the RealView Compilation Tools (RVCT) version 1.2. Many of

c2983

Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: C2983 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C2983 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。

C2983

Contextual Info: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)