2SA1729
Contextual Info: Ordering n u m b e r:EN 3133 _ No.3133 2 S A 17 2 9 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage
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2sa1729250mm2 |
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2SB1324
Abstract: 2SD1998
Contextual Info: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and
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en31302sb1324/2sd19982sb13242sd1998 |
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2SB1323
Abstract: 2SD1997
Contextual Info: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.
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2sb132
Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
Contextual Info: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.
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2sb13242sd1998en3130a2sb132+42a markingitr09586itr09587itr09588
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2sa172
Abstract: 2SA1728
Contextual Info: Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.
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en31322sa17282sa172 |
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A1728
Abstract: 2SA1728
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 22E » i m u i h .ooo?oae o $3132 F e a tu re s • Adoption of FBET process • Low collector-to-emitter saturation voltage • F ast switching speed • Small-sized package A bso lu te M axim um R a tin g s atT a= 25°C
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2SA1728
Abstract: uc 600
Contextual Info: Ordering n u m b e r:E N 3 1 3 2 2 S A 172 8 No.3132 SAÊÊYO PNP Epitaxial P lanar Silicon Transistor High-Speed Switching Applications ¡ F eatu res • Adoption of FBET process •Low collector-to-emitter saturation voltage • Fast switching speed • Small-sized package
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en31322sa1728uc 600 |
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transistor 2038
Abstract: 2SA1729 S60S6
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage
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2sa1729-t-37-/250mm2transistor 2038+1s60s6
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2sa172
Abstract: 2SA1729
Contextual Info: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
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Contextual Info: O rdering num ber: E N 3 1 3 7 2SK1332 N o .3 1 3 7 N -C hannel Ju n ctio n Silicon FET Low-Frequency General-Purpose Amp Applications A p p lic a tio n s •Ideal for use in v ariable resistors, analog sw itches, low-frequency am plifiers, an d co n stan t-cu rren t
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2sk13322sk1332-applied6089mo |
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Contextual Info: O rdering num ber: EN 3133 J 2SA1729 N o .3133 J SA \YO P N P E pitaxial P la n a r Silicon T ra n sisto r High-Speed Switching Applications F e a tu r e s • Adoption of FBET, MBIT processes •L arge c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage
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2sa17296089mo |
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3104j
Abstract: 2SB1324 2SD1998 2SD1 MARKING B
Contextual Info: ^ Ordering number: EN 3130 2SB1324/2SD1998 PNP/NPN Epitaxial P lanar Silicon Transistors Compact Motor Driver Applications F eatu res •Low saturation voltage • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter.
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2sb1324/2sd19982sb1324250mm23104j+22sd19982sd1 marking b
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2SK1332
Abstract: 2SK303
Contextual Info: O rdering num ber: EN3137 2SK1332 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications A p p licatio n s - Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. F e a tu re s
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en31372sk13322sk1332-applied2sk303 |
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2SB1323
Abstract: 2SD1997 ITR09577 ITR09578
Contextual Info: 2SB1323 / 2SD1997 Ordering number : EN3129A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1323 / 2SD1997 Compact Motor Driver Applications Features • • • • • Contains input resistance R1 , base-to-emitter resistance (RBE).
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2SB1324
Abstract: 2SD1998 ITR09586 ITR09587 ITR09588 ITR09589
Contextual Info: Ordering number:ENN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1324/2SD1998] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Low saturation voltage. · Contains diode between collector and emitter.
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enn31302sb1324/2sd199825max2sb1324+52sd1998itr09586itr09587itr09588itr09589
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2SB1323
Abstract: 2SD1997 ITR09577 ITR09578 ITR09579 ITR09580
Contextual Info: Ordering number:ENN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1323/2SD1997] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Contains input resistance R1 , base-to-emitter
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Contextual Info: O rd e rin g n u m b e r: E N 3 1 3 2 2SA1728 No.3132 i S A \Y O PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Adoption of FBBT process • Low collector-to-emitter saturation voltage •Fast switching speed • Snail-sized package
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2sa1728-200ma6089mo |
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2SA1728
Abstract: ITR04396 ITR04397
Contextual Info: Ordering number:ENN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · High-speed switching. · Small-sized package.
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enn31322sa17282018bitr04396+1itr04397
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2SB1323
Abstract: 2SD1997
Contextual Info: O rdering num ber : EN3129 2SB1323/2SD1997 No.3129 PNP/NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications F e a tu re s •Contains input resistance Rj , base-to-emitter resistance(RBE)• Contains diode between collector and emitter.
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en31292sb1323/2sd19972sb1323250mm2+12sd1997
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ic sj 2038
Abstract: sj 2038
Contextual Info: O rd e rin g n u m b e r :EN 3 1 2 9 2SB1323/2SD1997 No. 3129 P N P /N P N E pitaxial P lanar Silicon T ransistors Compact Motor Driver Applications F eatu res Contains input resistance(Ri , base-to-emitter resistance(RBE)Contains diode between collector and em itter.
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2sb1323/2sd19972sb1323250mm26089mo+32sd1997ic sj 2038sj 2038
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2SK1332
Abstract: 2SK303
Contextual Info: Ordering number:EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1332] 0.425 • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current
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2SA1729
Contextual Info: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.
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en31332sa1729 |
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