2SA172 Search Results

2SA1726

Abstract: 2SC4512
Contextual Info: Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1726 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC4512

Abstract: 2SA1726
Contextual Info: JMnic Product Specification 2SA1726 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SC4512 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base

2SA1725

Abstract: 2SC4511
Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1725 DESCRIPTION • With T 0 2 2 0 F packagc • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A bsolute m axim um ratings Ta=25iC

equivalent to 220f

Abstract: 2SA1725 2SC4511
Contextual Info: Inchange Semiconductor Product Specification 2SA1725 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

Contextual Info: SANKEN ELECTRIC CO LT» SSE » • 7 ^ 0 7 4 1 D D D Q ^ E MTT B S A K J Silicon PNP Epitaxial Planar 2SA1726 ☆ C o m p le m e n t to ty p e 2 S C 4 5 1 2 Application Example: • O u tlin e D raw in g 1 ■ ■ ■M T -2 5 T 0 2 2 0 A u d io and G en eral P urp ose

2SA1727

Abstract: 2SA1776 2SA1812 96-609-A313
Contextual Info: Transistors 2SA1812 / 2SA1727 / 2SA1776 96-609-A313 320 Transistors Packages 45

Contextual Info: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

pa 2030a

Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

smd marking AG

Abstract: AG marking transistor smd marking SMD BR 2sa172 2SA1729
Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter

2sa172

Abstract: 2SA1728
Contextual Info: Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

2SA1725

Abstract: 2SC4511 FM20 2sa1725 transistor
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C

2SA1885

Abstract: transistor 2sa1776
Contextual Info: 2SA1885 2SA1812 / 2SA1727 / 2SA1776 Transistors High-frequency Amplifier Transistor, RF switches — 10V, — 0.1 A I 2S A 1885 # F e atu re s • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C ) t ) H ig h tran sitio n fre q u e n cy . (T y p . 6 5 0 M H z )

sanken power transistor 2SA1216

Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

Contextual Info: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7

2SA1720

Abstract: TD772 TD-7729 RL- 3208 A
Contextual Info: データ・シート ダーリントン・パワー・トランジスタ Darlington Power Transistor 2SA1720 PNP エピタキシアル形シリコン・トランジスタ ダーリントン接続 高速度スイッチング用 工業用 ★ 2SA1720 は，高速

2SA1726

Abstract: 25T2 2SC4512
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1726 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 C package • C om plem ent to type 2SC4512 APPLICATIONS • Audio and G eneral Purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC4512

Abstract: 2SA1726 s 034
Contextual Info: JMnic Product Specification 2SC4512 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1726 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2SA1295 2SC3264

Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493
Contextual Info: 2-1. Power Transistors Transistors for Audio Amplifier Single emitter Type No. PC W 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO (V) IC (A) hFE (min) fT (MH Z) Package FM20 (T0220F) MT-25 (T0220) 80 6 2SA1693/2SC4466 MT-100 (T03P) 60 2SA1907/2SC5099 FM100 (T03PF)

transistor 2038

Abstract: 2SA1729 S60S6
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage

2038A

Abstract: 2SA1724
Contextual Info: Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=1.5GHz typ . · High current (IC=300mA). · Adoption of FBET process. unit:mm 2038A

2SC4512

Abstract: 2SA1726
Contextual Info: SavantIC Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors •Wit DESCRIPTION With TO-220C package ·Complement to type 2SA1726 APPLICATIONS ·Audio and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2sa172

Abstract: 2SA1729
Contextual Info: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.