2SK932 Search Results

2SK932

Contextual Info: Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. · Large yfs.

BU 2058

Abstract: 2SK932 OT100 transistor R3125
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7TT707t 2SK932 000 3=1130 T T - J /- Z 5 N -C h an n el Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n e r RF am p, low-noise am p F e a tu re s • Adoption of FBET process

28413

Abstract: ITR00902 ITR00903 2SK932 ITR00898 ITR00899 ITR00900 ITR00901
Contextual Info: 注文コード No.N 2 8 4 1 A 2SK932 No. N2841A 72199 半導体ニューズ No.2841 とさしかえてください。 2SK932 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 用途 ・AM チューナ RF 増幅 , ローノイズアンプ用。

Contextual Info: Ordering number : EN2841B 2SK932 N-Channel JFET http://onsemi.com 15V, 7.3 to 24mA, 50mS, CP Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

Contextual Info: Ordering number : EN2841B 2SK932 N-Channel JFET http://onsemi.com 15V, 5 to 24mA, 50mS, CP Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

Contextual Info: Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. · Large yfs.

cp 035 sanyo

Abstract: bau 95 2SK932
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process

2SK932

Contextual Info: 2SK932 Ordering number : EN2841A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

2sk932

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK932

Abstract: CPH5901 2SC4639 ITR10329 ITR10330 npn fet
Contextual Info: CPH5901 注文コード No. N 8 2 7 8 A 三洋半導体データシート 半導体ニューズ No.N8278 とさしかえてください。 CPH5901 TR : NPN エピタキシァルプレーナ型シリコントランジスタ FET : N チャネル接合型シリコン電界効果トランジスタ

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

CPH5901

Contextual Info: Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly

Contextual Info: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

TA3705

Contextual Info: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

2SK2073

Abstract: 3SK251 spa semiconductor lf SVC355 tuner 92 2SK715
Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y Devices 1 . AM, F'M T u n e r ANT V LAI 137 LAI 193 ♦ B F Amp ★ T u n i nR Diode use SV C 321SPA SVC352 SYC323 SVC353 SVC333 SVC 3 5 4 SVC341 SVC355 SVC3Í2 SVC363 SVC364 SVC343 SVC34 4 S VC 34 5 S VC 3 4 6

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4