2SK22 Search Results

diode U1J

Contextual Info: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 4V Gate Drive

Contextual Info: TO SHIBA 2SK2233 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2233 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M AX.

2SK2235

Abstract: DDS3400 44t transistor DDS34
Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2229

Contextual Info: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive

2SK2200

Contextual Info: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2

2SK2292-01L

Contextual Info: F U JI 2SK2292-01L.S G IlL lM E U iM J IS FAP-IIA Series > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V Guarantee N-channel MOS-FET 250V 4A l.lfl 20W > Outline Drawing - Avalanche Proof

Contextual Info: TO SHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2229 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2

K2231

Abstract: 2SK2231
Contextual Info: 2SK2231 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2231 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V 駆動です。 z オン抵抗が低い。

2SK2226-01L

Abstract: 2SK2226
Contextual Info: 2SK2226-01L,S N-channel MOS-FET F-III Series 150V > Features - 0,08Ω 20A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

2SK2247

Contextual Info: 2SK2247 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,

2SK2219

Contextual Info: Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Package Dimensions unit:mm 2058A 0.3 0.2 [2SK2219] 0.15 3 0 to 0.1 0.425 2.1 1.250 • Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.

1020C

Abstract: 2SK2212 DSA003639
Contextual Info: 2SK2212 Silicon N-Channel MOS FET ADE-208-1351 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control

Contextual Info: FU JI t ìU J M a j'U t ìU E 2SK2250-01L,S FAP-IIA Series > Features - N-channel MOS-FET 250V 2 Q. 2A 10W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

Contextual Info: 2SK2247 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive

2SK2294

Abstract: 481J1
Contextual Info: Transistors Switching 800V, 3A 2SK2294 •F e a tu re s ^External dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5 ) Easi ly designed d rive circu its.

2SK2228

Contextual Info: TOSHIBA 2SK2228 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOS1V 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 APPLICATIONS. 4V GATE DRIVE

Contextual Info: 2SK2225 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter

Contextual Info: F U JI ö 14@iEiiJuä[Je 2SK2254-01 L,S N-channel MOS-FET FAP-IIA Series > Features High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof T-PACK L 4.5 Symbol Drain-Source-Voltage

Contextual Info: 2SK2252-01 LfS FU JI N-channel MOS-FET FAP-IIA Series > Features - T -P A C K L 50W T -P A C K S 105 10.5». 4.5 4.5 J! T-ncd G S a JziL 12. 0.8 > Applications 1.2 1 .â i JJU 5.08 Switching Regulators UPS DC-DC converters General Purpose Power Amplifier

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SK2255-01MR

Abstract: 2SK2255
Contextual Info: 2SK2255-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators

2SK2206

Abstract: Hitachi DSA001652
Contextual Info: 2SK2206 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control

2sk2251

Contextual Info: 2SK2251-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators