2SK93 Search Results

2SK937

Contextual Info: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

2SK932

Contextual Info: Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. · Large yfs.

BU 2058

Abstract: 2SK932 OT100 transistor R3125
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7TT707t 2SK932 000 3=1130 T T - J /- Z 5 N -C h an n el Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n e r RF am p, low-noise am p F e a tu re s • Adoption of FBET process

28413

Abstract: ITR00902 ITR00903 2SK932 ITR00898 ITR00899 ITR00900 ITR00901
Contextual Info: 注文コード No.N 2 8 4 1 A 2SK932 No. N2841A 72199 半導体ニューズ No.2841 とさしかえてください。 2SK932 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 用途 ・AM チューナ RF 増幅 , ローノイズアンプ用。

Contextual Info: Ordering number : EN2841B 2SK932 N-Channel JFET http://onsemi.com 15V, 7.3 to 24mA, 50mS, CP Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

Contextual Info: Ordering number : EN2841B 2SK932 N-Channel JFET http://onsemi.com 15V, 5 to 24mA, 50mS, CP Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer

AM/Tuner

Abstract: 2SK937 2SC2812 FC21 2SK93-7
Contextual Info: FC21 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp. AM tuner RF Amp. Applications TENTATIVE Features •Composed of 2 chips, one being equivalent the 2SK937 and the other the 2SC2812 in the conventional CP package,

2SK937

Abstract: Y352 2SK93-7
Contextual Info: Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Large yfs. · Small Ciss. unit:mm 2019B [2SK937] 5.0 4.0 5.0 4.0 0.6 2.0 0.45

tic 2067

Abstract: 2SK931 2SK9 power 22E
Contextual Info: SANYO SEMICONDUCTOR CORP 22E 1> • 7^7071: QOOtlS? T ■ F e a tu re s • Adoption of FBET process • Large lyfel ■Sm all Cjgg • Very low noise figure • Very sm all-sized package p erm ittin g 2SK931-applied sets to be m ade sm a lle r a n d slim m er

2SK931

Abstract: W1U-1 MARKING CL4 Transistor
Contextual Info: SANYO SEMICONDUCTOR CORP EEE D • 7^7071: O OO b' i S? T ■ F e a tu re s • Adoption of FBET process • Large lyfsl ■Sm all Ciss • Very low noise figure • Very sm all-sized package p erm ittin g 2SK931-applied sets to be m ade sm a lle r a n d slim m er

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

Contextual Info: Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. · Large yfs.

cp 035 sanyo

Abstract: bau 95 2SK932
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process

2SK934

Abstract: 2SK943 2Sk955 2SK935 2SK936 2SK931 2SK933 2SK932 2SK942 2sk941
Contextual Info: - 76 - f Ÿ± € m m m iS ft H M 2SK931 £ V* i A K 2SK93Q X V X P d /P c h I* * (V) ^5 % fë ft (A) * (W) Ig s s (max) (A) Vg s (V) (min) (A) ^ 5<l (Ta=25tC ) M (max) V d s (A) (V) (min) (V) (max) V d s (V) (V) 9 m (min) (S) (< r Id (A) Vds (V) Id

2SK932

Contextual Info: 2SK932 Ordering number : EN2841A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

2sk932

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

Contextual Info: Ordering number: EN 3006 i SA%YO _ 2SK937 No.3006 N-Channel Junction Silicon FET i High-Frequency General-Purpose Amp Applications F eatu res • Adoption of FB E T process •Large lyfsi •Small CiSS A bsolute Maximum R atings at Ta = 25°C

N3006

Abstract: 2SK937 ITR00909 ITR00910 ITR00911 ITR00912 ITR00913 ITR00914 MA803
Contextual Info: 注文コード No.N 3 0 0 6 2SK937 No. N3006 72199 2SK937 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波一般増幅用 ・FBET プロセス採用。 ・yfs が大きい。 ・Ciss が小さい。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

FET 2SK125

Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
Contextual Info: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D

2SK1747

Abstract: 2SK937
Contextual Info: 'M l^ f f lJÊ â f é F E T * - «s a * E& • 2 S K 1 0 6 5 « Ê : iS JS S H fâ t ilM E& • 2 S K 1 0 6 6 AM f j - t : RF i f t S M , &&: n - / - i x ‘T lY f s I ^ ê l'o a Vgdo V ¡ G(mA) : Crss  i'/ J'è l'o â n ä : fë « M te t# S « y 7%