3289MO Search Results

2SK937

Contextual Info: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

2SK968

Abstract: 2SK9
Contextual Info: SANYO S E M I C O N D U C T O R CORP 2SK968 S2E D • 7 en ? ü 7 b ODQb'IbB 5 ■ T - 3 I .- Z S # N -C h a n n e l Junction Silicon FET 2065 High-Frequency General-Purpose Amp Applications F e a tu re s • Small-sized package p erm ittin g 2SK968-applied se ts to be m ade sm a lle r an d slim m er

Contextual Info: Ordering number: EN 3 0 0 6 2SK 937 N o.3006 N -C hannel Ju n ctio n Silicon FET High-Frequency General-Purpose Amp Applications F e a tu r e s • Adoption of FBET process • L arge lyfsl • Sm all Ciss b s o lu te M a x im u m R a tin g s a t T a= 25°C

2SK937

Abstract: Y352 2SK93-7
Contextual Info: Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Large yfs. · Small Ciss. unit:mm 2019B [2SK937] 5.0 4.0 5.0 4.0 0.6 2.0 0.45

Contextual Info: Ordering number: EN 3006 i SA%YO _ 2SK937 No.3006 N-Channel Junction Silicon FET i High-Frequency General-Purpose Amp Applications F eatu res • Adoption of FB E T process •Large lyfsi •Small CiSS A bsolute Maximum R atings at Ta = 25°C