|
Contextual Info: Advanced SSH25N40A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 0 .2 Œ lD = 2 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|^A(Max.) @ VDS = 400V
|
OCR Scan
|
ssh25n40a |
PDF
|
|
Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES B V dss = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ M Low Ros(on) • 0.162
|
OCR Scan
|
ssh25n40a |
PDF
|
SSH3N70
Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00
|
OCR Scan
|
irfp332irfp330irfp342irfp340+16irfp352irfp350ssh25n40assh25n40irfp433irfp431ssh3n70ssh15n55assh20n50assh8n60ssh15n60assh20n45assh20n50irfp453irfp452irfp451
|
PDF
|
SSH25N40A
Abstract: SSH25N40
Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V
|
Original
|
ssh25n40assh25n40 |
PDF
|
ci 648
Abstract: SSH25N35 SSH25N40 250M
Contextual Info: N-CHANNEL POWER MOSFETS SSH25N40/35 FEATURES • L o w e r R d s <o n • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
ssh25n40/35ssh25n40ssh25n35ci 648+1250m
|
PDF
|
3180 diode
Abstract: SSH25N40A DS8010
Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V
|
Original
|
ssh25n40a3180 diodeds8010 |
PDF
|
J200 mosfet
Abstract: SSH25N40 J200 SSH25N40A
Contextual Info: Advanced SSH25N40A P o w e r MOSFET FEATURES BVDSS — 400 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge RüS on = 0.2 £2 lD = 25 A ■ E xtended S afe O pe ra ting A rea
|
OCR Scan
|
ssh25n40aj200 mosfetssh25n40j200 |
PDF
|
RG53
Abstract: SSH25N40A
Contextual Info: SSH25N40A A dvanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = 25 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V OS = 400V
|
OCR Scan
|
ssh25n40a0q40303o-220-f-4ldd3b33e+2003b333rg53
|
PDF
|
irfs250a
Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A
|
OCR Scan
|
irfp140airfp150assh70n10airfp240a+7irfp250assh45n20airfp244airfp254airfp340airfp350airfs250a
|
PDF
|
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
|
OCR Scan
|
ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230airf1740irl244irf1740aks 0550irl244airfz34assh6n80airf634airfs750irfs640
|
PDF
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
|
PDF
|
FQA90N08
Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
Contextual Info: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214
|
Original
|
fqa170n06fqa85n06fqa65n06fqa160n08+11fqa90n08fqa70n08fqa58n08fqa44n08sfh9240sfh9250lfqa38n30fqa9n90 equivalentsfh154irfp150afqa140n10
|
PDF
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
|
PDF
|
ssh17n55
Abstract: IRFP141 SSH40N20 SSH22N45 irfp250
Contextual Info: MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL Part Number IRFP141 IRFP151 BV d s s V lD(on)(A) Ros(on)(fl) R0jc(K/W) PD(Watt) Page 80 28.00 0.077 582 0.055 0.030 0.83 0.65 150 40.00 60.00 190 230 280 592 597 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 100
|
OCR Scan
|
irfp141irfp151ssh60n08ssh70n08+10ihfp140irfp150ssh60n10ssh70n10irfp241irfp251ssh17n55ssh40n20ssh22n45irfp250
|
PDF
|
|
|
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
|
Original
|
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7ka1m0880 application notess8550 d 331dual cc baw62ka2s0680ss8550 sot-23mpsa92(ksp92) equivalentdiode 1n4148 ll-34
|
PDF
|
SSH10N10
Abstract: SSH10N06 SSH10N70A ssh25n35 SSH10N05 SSH10N08 SSH10N70 SSH8N15 SSH8N18 SSH8N20
Contextual Info: - 310 - S € *± f ft A t Vd s £ Vg s ÍS 11 Ta=25^3 Pd Id Ig s s Vg s Idss th> or £ (V) 4# ti (Ta-25'C) I d (on) D s(on ) Ciss g fs Coss Crss V g s -0 Vgs Vd g % % Vd s = (V) * /CH * /C H (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) (max) Id (mA)
|
OCR Scan
|
ssh8n15ssh8n18ssh8n20ssh8n55+12ssh20n50assh25n35ssh25n35assh25n40assh40n15ssh40n15assh10n10ssh10n06ssh10n70assh10n05ssh10n08ssh10n70
|
PDF
|
SSH22N35
Abstract: SSH22N40 250M SSH25N35 SSH25N40
Contextual Info: N-CHANNEL POWER MOSFETS SSH22N40/35 FEATURES • Lower R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
ssh22n40/35ssh22n40ssh22n35250m+2ssh25n35ssh25n40
|
PDF
|
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
|
OCR Scan
|
ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230assd2104irfm014ssp80n06irfu210airfi530asss7n60airfu*230asss7n60a 951ssp2n60airf640a
|
PDF
|
IRF9540 application
Abstract: IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830
Contextual Info: N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON) (A) RDS(ON)(Ω) Operating Temperature: -55 o C to 150oC Drain-Source Min. On-State Part No. Brkdwn. Voltg. DS Current 40.00
|
Original
|
150ocssh20n50ssh60n10ssh15n60+16ssh6n60irfp250irfp150ssh40n20irfp254ssh25n40irf9540 applicationirf9540 mosfetirfs730 equivalentrds 0,50 id 1,8 adata sheet irf9540datasheet irf9640 mosfetirf9510irf9530 mosfetirfs634irfs830
|
PDF
|
|
Contextual Info: Advanced Power MOSFET S FEATURES • ■ ■ ■ ■ ■ ■ S H 2 5 N 4 0 A BV0SS = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max @ Vos*400V
|
OCR Scan
|
ssh25bh0a300nfssh25n40a |
PDF
|
SM25N
Abstract: ssm25n40
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40
|
OCR Scan
|
7tb414hssh25n35/25n40ssm25n35ssm25n40+4ssh25n35ssh25n40ssm25n35/25n40sm25n
|
PDF
|
