SM25N
Abstract: ssm25n40
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40
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7tb414hssh25n35/25n40ssm25n35ssm25n40+4ssh25n35ssh25n40ssm25n35/25n40sm25n
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ci 648
Abstract: SSH25N35 SSH25N40 250M
Contextual Info: N-CHANNEL POWER MOSFETS SSH25N40/35 FEATURES • L o w e r R d s <o n • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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ssh25n40/35ssh25n40ssh25n35ci 648+1250m
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SSH60N06
Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
Contextual Info: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151
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ssh60n06ssh60n06airfp133irfp131+12irfp143irfp141irfp153irfp151irfp132irfp130irfp142irfp250 irfp254irfp230irfp242irfp333ssh40n15a
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ssh17n55
Abstract: IRFP141 SSH40N20 SSH22N45 irfp250
Contextual Info: MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL Part Number IRFP141 IRFP151 BV d s s V lD(on)(A) Ros(on)(fl) R0jc(K/W) PD(Watt) Page 80 28.00 0.077 582 0.055 0.030 0.83 0.65 150 40.00 60.00 190 230 280 592 597 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 100
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irfp141irfp151ssh60n08ssh70n08+10ihfp140irfp150ssh60n10ssh70n10irfp241irfp251ssh17n55ssh40n20ssh22n45irfp250
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SSH10N10
Abstract: SSH10N06 SSH10N70A ssh25n35 SSH10N05 SSH10N08 SSH10N70 SSH8N15 SSH8N18 SSH8N20
Contextual Info: - 310 - S € *± f ft A t Vd s £ Vg s ÍS 11 Ta=25^3 Pd Id Ig s s Vg s Idss th> or £ (V) 4# ti (Ta-25'C) I d (on) D s(on ) Ciss g fs Coss Crss V g s -0 Vgs Vd g % % Vd s = (V) * /CH * /C H (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) (max) Id (mA)
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ssh8n15ssh8n18ssh8n20ssh8n55+12ssh20n50assh25n35ssh25n35assh25n40assh40n15ssh40n15assh10n10ssh10n06ssh10n70assh10n05ssh10n08ssh10n70
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SSH22N35
Abstract: SSH22N40 250M SSH25N35 SSH25N40
Contextual Info: N-CHANNEL POWER MOSFETS SSH22N40/35 FEATURES • Lower R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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ssh22n40/35ssh22n40ssh22n35250m+2ssh25n35ssh25n40
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