3N209 Search Results

3N209

Abstract: dual-gate
Contextual Info: 3N209 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N209 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Used in UHF Low Noise Amplifier Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS I 30 mA VDS 25 V PDISS

3n210

Abstract: 3N209 feedthru cap g2f 160 c2 C96d
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 M OT O RO L A i E b3t.72S4 OOaat.15 3 SC (XSTRS/R F) 96D 8 2 6 1 5 D _ T - 3 t - 2. S ' 3N209 MAXIMUM RATINGS Rating Sym bol Value Unit Vd s 25 Vdc V d G1 VDG2 30 30 Vdc Drain-Source Voltage Drain-Gate Voltage CASE 20-03, STYLE 9

Contextual Info: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain – source voltage VDS 25 Vdc Drain gate voltage VDG1 VDG2 30 Vdc Gate current IG1R IG1F IG2R IG2F -10 10 -10 10 mAdc Drain current – continuous

3N209

Contextual Info: ., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 3N209 MAXIMUM RATINGS Rating Symbol Value Unit VDS VDGI voG2 ID 25 Vdc Vdc 30 mAdc 'G1R 'G1F -10 10 -10 10 mAdc Drain-Source Voltage Drain-Gale Voltage

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

mpf131

Abstract: MFE131 3N201 3N210 3n207 MPF132 3N201 APPLICATIONS 3N209 3N208 3N204
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} ! 6367255 MOTOROLA SC DE |t.3b7S55 0030045 CD I O D E S / O P T O 3 ^c 3 8 0 42 d T - ?/*• ?. F IE L D -E F F E C T TR A N SISTO R S D ICE continued) DIE NO. 3C201 LINE SOURCE — DFM877 This die provides performance equal to or better than that of

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

3N209

Abstract: 3N204 3N205 75G60 ae5 uhf 3n210
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC D e | l.3L.72S4 D0flSbl3 □ 9 6D 8 2 6 1 3 C X ST R S/ R F D MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Qate Voltage Vdg 30 Vdc Drain Current Id 50 mA Reverse Gate Current

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A