MD2218 Search Results

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

MQ-2

Contextual Info: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage

MD218

Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Contextual Info: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­

Contextual Info: \Pioau.ctit Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS MD221BAF MD2219AF MO2218.A MD2218AF Symbol MQ2219.A MD2219AF Rating Unit Collector-Emitter Voltage VCEO 30 40 Vdc

2n2484 complementary

Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913

72s4

Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
Contextual Info: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A MD2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C

Q2219

Abstract: Q2219A uj 44 MQ-2
Contextual Info: MOTOROLA SC ÍXSTRS/R 6367254 Tb F> MOTOROLA SC XSTRS/R DE~ | t i B t i T S S M 96D 8 2 4 3 5 _ T F □ G f l E Ll 3 S D ^ i- 9 M A X I M U M R A T IN G S Symbol Rating M D 22 18 A F M D 2219AF M 02218, A MD2218AF M Q2219,A MD2219AF U nit Cotlector-Emitter Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N3563

Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

Contextual Info: M O T O R O L A SC XSTRS/R F 1 EE D | b 3 b ? 5 S 4 OOÖfe.540 7 | M AXIM UM RA TIN G S Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc ic 500 mAdc Rating Collector Current — Continuous

Contextual Info: MOTOROLA S C 6367254 MOTOROLA SC ÍX ST R S /R F3- Tt. XSTRS/R D Ê J b3fc>7554 0 0 0 2 4 ^ 4 F 96D 8 2 4 9 4 D T-H3 - a S M A X IM U M RATINGS Value Symbol Rating Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO _ 40 Vdc Emitter-Base Voltage

2n5794

Abstract: 2N5793 MOTOROLA 2N5793 2N5793 JAN
Contextual Info: M O TO R OL A SC X S TR S /R I lae O I fc>3b?254 aaati443 F 2N5793 2N5794 M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b o 6.0 Vdc ic 600 mAdc Collector Current — Continuous

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: