2N998 Search Results

Contextual Info: TYPE 2N998 N-P-N D A R LIN G TO N -C O N N EC TED SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 3 1 1 9 3 9 . J U N E 1 9 7 3 TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION •

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3816

Abstract: 2N999 2N3816A 2N3817 2N3817A 2N3838 2N4937 2N4938 2N4939 2N4940
Contextual Info: Discrete Devices U IO U C IC Tra n sisto rs Cont. Differential and Dual Amplifiers (Cont.) L ic ¥ iu c ;> E le c tric a l C h a ra cte ristics @ 25° C (O ne Sid e ) M a x im u m R a tin g s A m b ie n t P q Type P o la rity One Both Side Sides V c E lS a t ) @ I c / I b

UHF UHF Transistors

Abstract: 2N2857 2N3478 2N998 2n5179 2N2865 2N3839 2N917 2N917A 2N918
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB V (V) (V) µA) (µ MIN MIN MIN MAX hFE @ IC @ VCE (V) (mA) MIN (V) MAX VCE (SAT) @ IC (V) (mA) MAX fT Cob (MHz) *Ccb (pF) MIN MAX 2N917 RF/IF OSCILLATOR 30 15 3.0 0.001

FPQ3725

Abstract: 2n999 FPQ3724 FPQ-3724
Contextual Info: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @

2n998

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA Darlimaton Amplifiers Maximum Ratings Type Polarity PD Electrical Characteristics @ 25° C HFE@'C Ambient mW VCB VCE VEB Volts Volts Volts Min/Max

bc352

Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

UHF UHF Transistors

Abstract: CEN832 2N5179 CEN741 RF Power Transistors 2N3478
Contextual Info: Small signal npn Transistors TO-72 Case TYPE NO. DESCRIPTION v CBO VCEQ V (V) h FE v EBO tCBO @ v CBO (V) (V) (HA) @ic 9 VCE (m A) (V) VCE(SAT] @ >C *T Cob (V) (m A) (MHZ) *Cc t> MAX MIN (PF) 2N917 RF/IF OSCILLATOR MAX 3.0 0.001 15 . 20 15 20 RF/IF OSCILLATOR

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

BC352* CSR

Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index

2N6522

Abstract: ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 2N999 IR5000 IR5253
Contextual Info: SE MIC OND UC TO R TECHNOL OGY GSE D | fll3b4Sfl Ü0DD23S T r_ T4 7 / SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.t. Jay^treet ¿7 stuarti F |0rida 34997 7" - 33 3 / 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 ' NPN & PNP' SILICON DARLINGTON TRANSISTORS

2n1275

Abstract: 2n697a 2N1221 2N1222 2N328A 2n2008 2n6992 2N1233 2N1232 2N708
Contextual Info: 1 1 IS S O O O O O LO 'S- LO io 03 "Z 1 1 1 l£ 1 LO CMIO LO 1 CM-i—i - y - CO CO OO00 co CO 00 CO CO 00 CO CO 00 CO 00 Ó Ó Ó Ó Ó h h h H h Ó Ó Ó Ó Ó I— I— h—I— I— Ó Ó Ó Ó Ó h h h h l“ O O O o O O 1 IOIO CMCO O O O O O CO o o o o

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BSW17

Abstract: transistor bsw 67 2N998 BFX66 BFX67
Contextual Info: BGY 16 15 Z T5 Z T3 Z U Z "O Z P O LA RIT Y o PD max W o o 00 00 00 —» ^ -&I ro o o o pop o » * —* i \/ /\/\ L v C E O mm lc R A N G E (mA) o o o hFE min 30 l c (mA) 50 o o o 50 GO CO OO oop O) Nj fo cn cn '* V C E s a t max (V) 10 10 10 lc (mA) '