S0918 Search Results

s0918

Abstract: d7c transistor marking N10
Contextual Info: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND

SiA517DJ

Abstract: S09-1808
Contextual Info: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over

Si3948DV

Contextual Info: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

IRFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD224

Contextual Info: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the

IRFD214

Abstract: n mosfet low vgs
Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

si4914b

Abstract: si4914 Si4914BDY
Contextual Info: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

s0918

Abstract: IRFD9220
Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

IRFD220

Abstract: SiHFD220-E3 IRFD220PBF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Si7212DN

Abstract: Si7212DN-T1-E3 Si7212DN-T1-GE3
Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

si8473

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: Si7446BDP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 19 0.010 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SiR426DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.0105 at VGS = 10 V 30a 0.0125 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4712DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 14.6 0.0165 at VGS = 4.5 V 12.9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power

Contextual Info: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

SiR168DP-T1-GE3

Contextual Info: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si7772DP

Abstract: si7772 SI7772DP-T1-GE3
Contextual Info: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Si4214DDY

Abstract: SI4214DD si4214
Contextual Info: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

IRLD014

Contextual Info: IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5 V Available • For Automatic Insertion 0.20 RoHS* Qg (Max.) (nC) 8.4 • End Stackable Qgs (nC) 2.6 • Logic-Level Gate Drive

SI4210

Abstract: Si4210DY
Contextual Info: New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0355 at VGS = 10 V 6.5 0.044 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

IRLD110

Contextual Info: IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • For Automatic Insertion Qgs (nC) 2.6 • End Stackable 3.3 • Logic-Level Gate Drive