SI4214 Search Results

Contextual Info: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4214DY

Abstract: 785 spice
Contextual Info: SPICE Device Model Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si4214DDY

Abstract: SI4214DD si4214
Contextual Info: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4214DDY

Abstract: SI4214DD
Contextual Info: SPICE Device Model Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

65256

Abstract: AN609 Si4214DDY
Contextual Info: Si4214DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET

Contextual Info: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC

MOSFET 2301

Abstract: 18-1122 8439 c 5929 transistor AN609
Contextual Info: Si4214DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

si4214

Abstract: Si4214DDY-T1-E3 SI4214DD si42
Contextual Info: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET

Contextual Info: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET

Contextual Info: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET

diode 18B

Contextual Info: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: DEMO MANUAL DC1555C LTC4365/LTC4365-1: Overvoltage, Undervoltage and Reverse Supply Protection Controller Description Demonstration circuit DC1555C is intended to demonstrate the performance of the LTC4365 and LTC4365-1 Undervoltage, Overvoltage and Reverse Supply Protection

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Tablet

Abstract: SI4925
Contextual Info: Tablet Table of Contents Audio Subsystem, Audio Codec. 3 Display, Ambient Light Sensors. 4

Contextual Info: LTC4365 Overvoltage, Undervoltage and Reverse Supply Protection Controller Description Features n n n n n n n Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V LTC4365: Blocks 50Hz and 60Hz AC Power

Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy