SI42 Search Results

Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si4200-BM

Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
Contextual Info: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28

67125

Contextual Info: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si4286

Contextual Info: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

SI4276DY

Contextual Info: Si4276DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: Si4230DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0205 at VGS = 10 V 8 0.026 at VGS = 4.5 V 8 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 7.3 APPLICATIONS

Contextual Info: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4276DY

Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4226DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0195 at VGS = 4.5 V 8 0.026 at VGS = 2.5 V 8 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 11 RoHS APPLICATIONS COMPLIANT

SI4276DY

Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4276DY

Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21

SI4276DY

Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4

S10-28

Abstract: Si4288DY
Contextual Info: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4

Si4214DY

Abstract: 785 spice
Contextual Info: SPICE Device Model Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si4228DY

Abstract: si4228
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition

Si4214DDY

Abstract: SI4214DD si4214
Contextual Info: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4210

Abstract: Si4210DY
Contextual Info: New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0355 at VGS = 10 V 6.5 0.044 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET